Remotely Pumped GHz Antibunched Emission from Single Exciton Centers in GaAs
Remotely Pumped GHz Antibunched Emission from Single Exciton Centers in GaAs
复制标题
GaAs 中单激子中心的远程泵浦 GHz 反聚束发射
DOI:
10.1021/acsphotonics.1c00094
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发表时间:
2021
期刊:
影响因子:
7
通讯作者:
P. V. Santos
中科院分区:
文献类型:
--
作者:
M. Yuan;K. Biermann;S. Takada;C. Bäuerle;P. V. Santos
Quantum communication networks require on-chip transfer and manipulation of single particles as well as their interconversion to single photons for long-range information exchange. Flying excitons propelled by GHz surface acoustic waves (SAWs) are outstanding messengers to fulfill these requirements. Here, we demonstrate the acoustic manipulation of single exciton centers consisting of individual excitons bound to shallow impurity centers embedded in a semiconductor quantum well. Time-resolved photoluminescence studies show that the emission intensity and energy from these centers oscillate at the SAW frequency of 3.5 GHz. Furthermore, these centers can be remotely pumped via acoustic transport of flying excitons along a quantum well channel over several microns. Time correlation studies reveal that the centers emit antibunched light, thus acting as single-photon sources operating at GHz frequencies. Our results pave the way for the exciton-based on-demand manipulation and on-chip transfer of single excitons at microwave frequencies with a natural photonic interface.
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DOI:
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发表时间:
2001
期刊:
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DOI:
--
发表时间:
2014
期刊:
影响因子:
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