Fast and slow gating are inherent properties of the pore module of the K+ channel Kcv.
Fast and slow gating are inherent properties of the pore module of the K+ channel Kcv.
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DOI：
10.1085/jgp.200910266
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发表时间：
2009-09
期刊：
影响因子：
--
通讯作者：
Moroni A
中科院分区：
文献类型：
--
作者：
Abenavoli A;DiFrancesco ML;Schroeder I;Epimashko S;Gazzarrini S;Hansen UP;Thiel G;Moroni A
Kcv是一种在异源系统中形成四聚体功能性K+通道的病毒蛋白。Kcv可以作为研究和操纵K+通道孔的基本性质的模型系统，因为其最小结构（94个氨基酸）产生离子通道的基本特征，例如选择性、门控和对阻断剂的敏感性。我们提出了在单通道水平的KCV属性的表征。在对称的100 mM K+中，单通道电导为114 ± 11 pS。两种不同的电压依赖性机制负责Kcv的门控。通过β分布分析的“快速”门控是在极端电位下单通道电流-电压曲线中负斜率电导的原因，如MaxiK钾通道，并且可以通过滤波器区域的耗尽加重不稳定性来解释。“慢”门控的存在通过非常低的（1-4%的量级）平均打开概率揭示，该概率是电压依赖性的并且是宏观电流的时间依赖性分量的基础。
Kcv from the chlorella virus PBCV-1 is a viral protein that forms a tetrameric, functional K+ channel in heterologous systems. Kcv can serve as a model system to study and manipulate basic properties of the K+ channel pore because its minimalistic structure (94 amino acids) produces basic features of ion channels, such as selectivity, gating, and sensitivity to blockers. We present a characterization of Kcv properties at the single-channel level. In symmetric 100 mM K+, single-channel conductance is 114 ± 11 pS. Two different voltage-dependent mechanisms are responsible for the gating of Kcv. “Fast” gating, analyzed by β distributions, is responsible for the negative slope conductance in the single-channel current–voltage curve at extreme potentials, like in MaxiK potassium channels, and can be explained by depletion-aggravated instability of the filter region. The presence of a “slow” gating is revealed by the very low (in the order of 1–4%) mean open probability that is voltage dependent and underlies the time-dependent component of the macroscopic current.
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影响因子：
56.9
作者：
Doyle, DA;Cabral, JM;MacKinnon, R
通讯作者：
MacKinnon, R
DOI：
10.1085/jgp.200609638
发表时间：
2006-11
期刊：
The Journal of general physiology
影响因子：
--
作者：
Blunck R;Cordero-Morales JF;Cuello LG;Perozo E;Bezanilla F
通讯作者：
Bezanilla F
影响因子：
2.4
作者：
Gazzarrini, S;Van Etten, JL;Moroni, A
通讯作者：
Moroni, A
DOI：
10.1073/pnas.0505158102
发表时间：
2005-12-06
影响因子：
11.1
作者：
Gao, LZ;Mi, XQ;Fan, Z
通讯作者：
Fan, Z
影响因子：
3.5
作者：
Moroni, A;Viscomi, C;Thiel, G
通讯作者：
Thiel, G