Internal friction study of ambient aging behaviors of irradiated tungsten by Si/H ions

Internal friction study of ambient aging behaviors of irradiated tungsten by Si/H ions
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Si/H离子辐照钨环境老化行为的内耗研究

DOI:
10.1007/s11706-013-0196-6
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发表时间:
2013-01
期刊:
Front. Mater. Sci.
影响因子:
--
通讯作者:
Chang-Song LIU
Chang-Song LIU
中科院分区:
其他
文献类型:
--
作者:
Qian-Feng FANG;Zi-Qiang ZHAO;Yan-Wen ZHANG;Chang-Song LIU

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采用内耗法结合SEM技术研究了高能Si ~(3+)和H ~+离子辐照钨的时效行为。SEM分析表明,由于Si和H的协同辐照作用,Si ~(3 ++)+ H ~+同时辐照试样表面的辐照损伤比Si ~(3+)+ H ~+顺序辐照试样或Si ~(3 ++)单辐照试样表面的辐照损伤严重。由于Si/H辐照诱导的高密度新鲜位错的存在,辐照样品的IF本底比未辐照样品的IF本底高约一个数量级。在Si ~(3+)和H ~+双辐照样品中,观察到了与位错拖曳氢原子运动有关的氢Snoek-Kê-Köster(SKK)峰,其峰高在室温下随时效时间的延长而降低。而Si ~(3 ++)+ H ~+双辐照试样则没有这样的氢SKK峰。其原因可以解释为氢的扩散和位错的钉扎效应。
The aging behaviors of irradiated tungsten by high energy Si3+and H+ions are mainly investigated using internal friction (IF) method combined with SEM technology. The SEM analysis indicates that more severe irradiation damage appears in the surface of simultaneous dual Si3++ H+irradiated specimen than that in the sequential dual Si3++ H+irradiated specimen or the single Si3+irradiated specimens because of the synergistic effect of Si and H irradiation. The IF background of the irradiated sample is about one order of magnitude higher than that of the unirradiated sample owing to the existence of high density fresh dislocations induced by Si/H irradiation. In the sequential dual Si3+and H+irradiated specimen, the hydrogen Snoek-Kê-Köster (SKK) peak associated with the movement of dislocations dragging hydrogen atoms is observed and its height decreases with aging time at room temperature. As for the simultaneous dual Si3++ H+irradiated specimen, however, there is no such hydrogen SKK peak. The reason can be explained as hydrogen diffusion and pinning effect of dislocations.
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