Electron Beam Doping (Superdiffusion) in Damage-Free Regions of Semiconductors by the Kick-Out Mechanism (Secondary-Ion Mass Spectrometer and Photoluminescence Measurements)
Electron Beam Doping (Superdiffusion) in Damage-Free Regions of Semiconductors by the Kick-Out Mechanism (Secondary-Ion Mass Spectrometer and Photoluminescence Measurements)
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通过踢出机制在半导体无损伤区域进行电子束掺杂（超扩散）（二次离子质谱仪和光致发光测量）
DOI：
10.1143/jjap.38.7144
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发表时间：
1999
影响因子：
1.5
通讯作者：
H. Fujimoto
中科院分区：
文献类型：
--
作者：
T. Wada;H. Fujimoto
采用750keV电子束掺杂方法，在室温下将锌原子掺杂到了无损伤区的GaAs中。实验结构为：Ga As(Layer 3)/Zn//Zn/As(Layer 1)结构，其中的Zn/GaAs层由衬底上的蒸发层组成。锌覆盖层表面仅与另一锌基板表面接触。在氮气中，用∼5×10~(17)电子厘米~(-2)在100°C的温度下对第三层(砷化镓)表面进行辐照。750keV的电子不会穿透锌层，因为电子的厚度范围较大。用二次离子质谱仪测量了锌在砷化镓中的扩散分布。研究了电子束掺锌砷化镓的光致发光光谱。
Zn atoms were doped into the damage-free regions of GaAs by a 750 keV electron beam doping method at room temperature. The experimental structures were GaAs (layer 3)/Zn//Zn/GaAs (layer 1), whose Zn/GaAs consists of Zn evaporated layers on GaAs wafers. The Zn overlayer surface is only in contact with another Zn substrate surface. The surfaces of layer 3 (GaAs) were irradiated with a fluence of ∼5×1017 electrons cm-2 at 100°C in N2 gas. The 750 keV electrons do not penetrate the Zn layers, because of larger thickness for the ranges of electrons. The diffusion profiles of Zn into GaAs were measured with a secondary-ion mass spectrometer. Photoluminescence spectra for electron beam Zn-doped GaAs were investigated.
室温下半导体电子束掺杂（超扩散）技术
DOI：
--
发表时间：
2003
期刊：
Defect and Diffusion Forum Vols.221-223
影响因子：
--
作者：
Takao Wada;Hiroshi Fujimoto
通讯作者：
Hiroshi Fujimoto