Regulating electron traps of Eu2+-doped Ba1.6Ca0.4SiO4 persistent and optically stimulated luminescence phosphor toward optical data storage
Regulating electron traps of Eu2+-doped Ba1.6Ca0.4SiO4 persistent and optically stimulated luminescence phosphor toward optical data storage
复制标题
调节Eu2掺杂Ba1.6Ca0.4SiO4持久光激发光荧光粉的电子陷阱以实现光学数据存储
DOI:
10.1016/j.jlumin.2021.118518
复制
发表时间:
2022-01
影响因子:
3.6
通讯作者:
Hu Yihua
中科院分区:
文献类型:
--
作者:
Zhang Junming;Yuan Lifang;Jin Yahong;Wu Haoyi;Chen Li;Hu Yihua
Nowadays, the optical data storage (ODS) has already become one of the most promising data storage technologies in this digital era. Optically stimulated luminescence (OSL) material has recognized as a considerable potential candidate for the new-generation ODS. The improvement of volatile memory performance and the increase of storage capacity are two critical challenges to be solved. In this work which is reporting on, a new novel Eu2+-doped orthosilicate phosphor has been studied showing both persistent luminescence and OSL. The trap density is significantly enhanced by 10-fold via Dy3+codoping. Information can be reversibly written into the traps by UV light illumination and then read out by optical or thermal stimulus. The capture and release dynamics of electrons by traps are studied in detail to reveal the OSL-based ODS mechanism. Moreover, as a proof-of-concept, ODS flexible medium is fabricated using the as-obtained OSL material to certify the application feasibility for erasable optical data write-in and read-out.
登录
查看更多内容
影响因子:
4.6
作者:
Liu, Feng;Yan, Wuzhao;Chuang, Yen-Jun;Zhen, Zipeng;Xie, Jin;Pan, Zhengwei
通讯作者:
Pan, Zhengwei
影响因子:
8.6
作者:
I. Wieder;L. Sarles
通讯作者:
I. Wieder;L. Sarles
影响因子:
19
作者:
Yixi Zhuang;Le Wang;Ying Lv;Tian-Liang Zhou;Rong-Jun Xie
通讯作者:
Rong-Jun Xie
影响因子:
3
作者:
R. Withers;J. G. Thompson;B. Hyde
通讯作者:
R. Withers;J. G. Thompson;B. Hyde
影响因子:
14.7
作者:
Andrew P. McAfee;Erik Brynjolfsson
通讯作者:
Andrew P. McAfee;Erik Brynjolfsson