Effect of different scintillator choices on the X-ray imaging performance of CMOS sensors
Effect of different scintillator choices on the X-ray imaging performance of CMOS sensors
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不同闪烁体选择对 CMOS 传感器 X 射线成像性能的影响
DOI：
10.1016/j.nima.2023.168136
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发表时间：
2023
期刊：
影响因子：
--
通讯作者：
Alikunju R
中科院分区：
文献类型：
--
作者：
Alikunju R
晶圆级互补金属氧化物半导体（CMOS）成像器在像素级将感测与模数转换集成的能力已经导致其在各种成像应用中的广泛吸引力。与电荷耦合器件（CCD）和基于非晶硅/硒的平板成像器（FPI）相比，这导致了这些成像器中的速度的显著提高和读出噪声的降低。本文通过改变典型X射线探测器的某些参数，如光纤面板（FOP），闪烁体衬底涂层，传感器像素间距和闪烁体厚度，比较了不同配置的CMOS X射线探测器的性能特点。使用针对一般射线照相应用的RQA 5（70 kV）辐射束质量进行评价。在可比较的空气比释动能值下，具有光纤板的探测器在大多数空间频率下显示出总体上更好的DQE性能，在低频处开始略低，然后在中频和高频处超过"无FOP"情况。对闪烁体具有不同基底涂层的探测器的分析显示，与黑色涂层的闪烁体相比，白色涂层的铝基底闪烁体的DQE相对较高。像素间距为50 μ m和100 μ m的探测器的DQE比较显示，像素间距为100 μ m的探测器的DQE更高，但需要注意的是，闪烁体足够厚，可以忽略pMTF的差异。最后，具有不同厚度的闪烁体的比较表明，最厚的闪烁体产生最高的DQE。这些表征研究有助于了解这些不同配置在各种一般X线摄影应用场景中的适用性，并有助于潜在用户确定最适合其特定成像需求的整体配置。
The ability of wafer scale Complementary Metal Oxide Semiconductor (CMOS) imagers to integrate sensing with analogue to digital conversion at the pixel level has led to their widespread appeal in a variety of imaging applications. This has led to significant improvement in speed and reduction in read-out noise in these imagers when compared to charge-coupled devices (CCDs) and amorphous silicon/selenium based flat panel imagers (FPIs). This paper compares the performance characteristics of CMOS X-ray detectors in various configurations by varying certain parameters of a typical X-ray detector such as fibre optic face plate (FOP), scintillator substrate coating, sensor pixel pitch and scintillator thickness. The evaluations were carried out using RQA5 (70 kV) radiation beam quality aimed at general radiography applications. At comparable Air Kerma values, detectors with a fibre optic plate showed an overall better DQE performance at most spatial frequencies, starting slightly lower at low frequencies then overtaking the “no-FOP” case at mid and high frequencies. The analysis of detectors with different substrate coatings for the scintillators showed comparatively higher DQE for the white-coated aluminium substrate scintillator compared to the black-coated one. The DQE comparison of detectors with 50 μ m and 100 μ m pixel pitch resulted in a higher DQE for the 100 μ m pixel pitch one, with the caveat that the scintillator was thick enough as to render differences in pMTF negligible. Finally, the comparison of scintillators with varying thicknesses showed that the thickest scintillator yielded the highest DQE. These characterisation studies helped in understanding the suitability of these different configurations in various general radiography application scenarios and could be of help to prospective users to determine the overall configuration that best fits their specific imaging needs.
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DOI：
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发表时间：
2013
影响因子：
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作者：
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2005
期刊：
SPIE Medical Imaging
影响因子：
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DOI：
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发表时间：
2012
期刊：
2012 IEEE International Symposium on Medical Measurements and Applications Proceedings
影响因子：
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影响因子：
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