Analysis of partially oxidised epitaxial silicon mono-layers on germanium virtual substrates using aberration corrected scanning transmission electron microscopy
Analysis of partially oxidised epitaxial silicon mono-layers on germanium virtual substrates using aberration corrected scanning transmission electron microscopy
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使用像差校正扫描透射电子显微镜分析锗虚拟衬底上部分氧化的外延硅单层
DOI：
10.1088/1742-6596/326/1/012050
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Ross I
中科院分区：
文献类型：
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作者：
Ross I
我们报告了应用像差校正 STEM 成像来研究部分氧化的外延硅钝化层的界面结构，该钝化层名义上为 2 个单层厚，沉积在 Si (001)/Ge 虚拟基板上。 HAADF成像揭示了Ge虚拟衬底和覆盖的SiO 2 之间存在1-2个单层晶体Si的证据。在外延Si和Ge虚拟衬底之间也明显存在1-2个单层台阶的界面粗糙度。残余晶体Si和覆盖的SiO 2 的总厚度表明初始外延Si层可能比标称值厚1-2个单层。
We report the application of aberration corrected STEM imaging to study the interface structure of a partially oxidised epitaxial-Si passivation layer, nominally 2 mono-layers thick, deposited on a Si (001)/Ge virtual substrate. HAADF imaging revealed evidence of 1-2 mono-layers of crystalline Si between the Ge virtual substrate and overlying SiO 2. An interface roughness of 1-2 mono-layer steps was also apparent between the epitaxial-Si and Ge virtual substrate. The total thickness of the residual crystalline Si and overlying SiO 2 suggests that the initial epitaxial-Si layer may have been 1-2 mono-layers thicker than the nominal value.
DOI：
10.1093/jmicro/dfp030
发表时间：
2009-12-01
期刊：
JOURNAL OF ELECTRON MICROSCOPY
影响因子：
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作者：
Sawada, Hidetaka;Tanishiro, Yasumasa;Takayanagi, Kunio
通讯作者：
Takayanagi, Kunio