Production and characterization of thin, self-supporting Si foils for use as targets in radioactive beam experiments
Production and characterization of thin, self-supporting Si foils for use as targets in radioactive beam experiments
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用作放射性束实验靶材的薄自支撑硅箔的生产和表征
DOI：
10.1016/j.nima.2019.163267
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发表时间：
2020
期刊：
影响因子：
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通讯作者：
deSouza, R.T.
中科院分区：
文献类型：
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作者：
Johnstone, J.E.;Hudan, S.;Folluo, C.;Werke, T.;DeYoung, P.A.;deSouza, R.T.
摘要详细介绍了薄的自支撑硅箔（天然的和同位素富集的）在放射性束反应研究中用作靶的发展。采用气相沉积法制备了厚度为1.220 μ g/cm 2的铝箔，并将其浮在直径为10-15 mm的铝框架上。在它们的生产过程中，使用石英晶体监测器测量箔厚度。随后，通过α粒子能量损失测量和卢瑟福背散射（RBS）来表征箔厚度。这些测量结果表明，厚度可以确定在0.5%的不确定性。使用RBS和X射线光电子能谱法评估箔的元素纯度。该分析表明，箔具有87%-90%的硅丰度。
Abstract Development of thin, self-supporting silicon foils (both natural and isotopically-enriched) for use as targets in reaction studies with radioactive beams is detailed. Foils with a thickness of∼ 220 μ g/cm 2 were produced using vapor deposition and were floated onto aluminum frames with 10–15 mm diameter holes. During their production, the foil thickness was measured using a quartz crystal monitor. Subsequently, the foil thickness was characterized by α particle energy loss measurements and Rutherford backscattering (RBS). These measurements demonstrated that the thickness could be determined to within a 0.5% uncertainty. The elemental purity of the foils was assessed using RBS and X-ray photoelectron spectroscopy. This analysis demonstrated that the foils have 87%–90% silicon abundance.
适用于电子诱发裂变研究的硅薄膜的制备
DOI：
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发表时间：
1976
期刊：
影响因子：
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作者：
A. Sandorfi;L. R. Kilius;J. L. Gallant
通讯作者：
J. L. Gallant
DOI：
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发表时间：
2017
期刊：
影响因子：
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作者：
J. Vadas;Varinderjit Singh;B. Wiggins;J. Huston;S. Hudan;R. deSouza;Zidu Lin;C. Horowitz;A. Chbihi;D. Ackermann;M. Famiano;K. Brown
通讯作者：
K. Brown