Analysis of hot spot temperature in power Si MOSFET with electro-thermal analysis
Analysis of hot spot temperature in power Si MOSFET with electro-thermal analysis
复制标题
电热分析法分析功率硅MOSFET的热点温度
DOI：
10.1109/impact.2013.6706628
复制
发表时间：
2013
期刊：
影响因子：
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通讯作者：
M. Ishizuka
中科院分区：
文献类型：
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作者：
R. Kibushi;T. Hatakeyama;S. Nakagawa;M. Ishizuka
近年来，电子产品的尺寸不断缩小，散热问题变得更加严重。因此，需要更精确的热设计来提高电子可靠性。为了更准确的热设计，我们应该考虑芯片的温度分布。在芯片中，安装有许多半导体器件。因此，为了研究芯片的温度分布，应该获得半导体器件的温度分布。功率硅MOSFET作为一种半导体器件广泛应用于汽车电子领域。然而，功率Si MOSFET的热特性尚不清楚。因此，我们重点关注功率 Si MOSFET，并使用电热分析来讨论热特性。计算结果表明功率Si MOSFET中出现了热点，并且热点温度随着外加电压的增加而升高。此外，当施加电压改变时，在任何分析条件下热点的出现位置几乎相同。
In recent years, electronics has been downsizing, and thermal problem becomes more serious. Therefore, more accurate thermal design is required for improvement of electronics reliability. For more accurate thermal design, we should consider temperature distribution of a chip. In a chip, a lot of semiconductor devices are mounted. Therefore, to investigate temperature distribution of a chip, temperature distribution of a semiconductor device should be obtained. Power Si MOSFET is widely used in car electronics as a semiconductor device. However, the thermal properties of power Si MOSFET are not clear. Therefore, we focus on power Si MOSFET, and discuss thermal properties using electro-thermal analysis. The calculation results show a hot spot appears in power Si MOSFET, and the hot spot temperature is higher with increase in applied voltage. Furthermore, the appearance position of the hot spot is almost the same in any analysis condition when applied voltage is changed.
亚微米硅 MOSFET 电热分析的网格分区法
DOI：
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发表时间：
2006
期刊：
Journal of Thermal Science and Technology Vol.1, No.2
影响因子：
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作者：
T.Hatakeyama;K.Fushinobu;K.Okazaki
通讯作者：
K.Okazaki