Growth of high quality Si-based (Gd2Ce)(Fe4Ga)O12 thin film and prospects as a magnetic recording media
Growth of high quality Si-based (Gd2Ce)(Fe4Ga)O12 thin film and prospects as a magnetic recording media
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高质量硅基(Gd2Ce)(Fe4Ga)O12薄膜的生长及其作为磁记录介质的前景
DOI：
10.1016/j.jallcom.2021.160086
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发表时间：
2021-04
影响因子：
6.2
通讯作者：
Zhuang Naifeng
中科院分区：
文献类型：
--
作者：
Lin Nanxi;Lin Youzhi;Wu Guanjie;Chen Xin;Zhang Zongzhi;Hu Xiaolin;Zhuang Naifeng
Ce 3+掺杂稀土铁石榴子石是光通信和信息技术领域的热门磁光材料。然而，由于Si上沉积的薄膜质量差，磁光器件的集成遇到了困难。本文采用射频磁控溅射法制备了高质量的Si基（Gd 2Ce）Fe 5 O 12和（Gd 2Ce）（Fe 4Ga）O 12薄膜。结果表明，Ga ~（3+）离子的引入可以保护Ce ~（3+）不被氧化，稳定石榴石相，提高薄膜的透光率，减小薄膜与Si衬底之间的晶格失配。500 ℃加热衬底有利于生长高质量的Si基薄膜。（Gd_2Ce）（Fe_4Ga）O_（12）/Si薄膜具有较强的克尔磁光效应和较高的磁致伸缩率。此外，该薄膜具有明显的面外磁各向异性，垂直矩阵比接近1，在高密度垂直磁记录方面具有可观的应用前景。
Ce3+-doped rare-earth iron garnet is a hot magneto-optical material in the field of optical communication and information technology. However, the integration of magneto-optical devices has encountered difficulties due to the poor-quality film deposited on Si. This paper focuses on high-quality Si-based (Gd2Ce)Fe5O12and (Gd2Ce)(Fe4Ga)O12thin films by using radio frequency magnetron sputtering method. It was found that the introduction of Ga3+ions can protect Ce3+from oxidation, stabilize the garnet phase, improve the optical transmittance, and reduce the lattice mismatch between the thin film and the Si substrate. And heating the substrate at 500 ℃ is conducive to grow high-quality Si-based films. The (Gd2Ce)(Fe4Ga)O12/Si thin film has the strong Kerr magneto-optical effect and the pretty high coercivity. Moreover, this film has the obvious out-of-plane magnetic anisotropy and its vertical matrix ratio close to 1, which indicates that it has the considerable prospects for high-density perpendicular magnetic recording.
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