Determination of band alignment in two-dimensional h-BN/WS2 van der waals heterojunction by X-ray photoelectron spectroscopy
Determination of band alignment in two-dimensional h-BN/WS2 van der waals heterojunction by X-ray photoelectron spectroscopy
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X 射线光电子能谱测定二维 h-BN/WS2 范德华异质结中的能带排列
DOI:
10.1016/j.jallcom.2020.157301
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发表时间:
2021-02
影响因子:
6.2
通讯作者:
Yang Jianhong
中科院分区:
文献类型:
--
作者:
Xing Shu’an;Zhao Guijuan;Xu Yan;Wang Jie;Li Xunshuan;Yang Wenge;Liu Guipeng;Yang Jianhong
We have fabricated two-dimensional h-BN/WS2van der Waals heterojunctions by stacking h-BN and WS2monolayers, and experimentally measured the valence band offset (VBO) of h-BN/WS2heterojunction by X-ray photoelectron spectroscopy (XPS). The h-BN and WS2monolayers band gaps and the measured value of VBO were used to determine the conduction band offset (CBO). The measurement results of VBO and CBO are 3.39 ± 0.15 eV and 0.57 ± 0.15 eV, respectively, revealing a type-I band alignment. It is urgent to measure the band alignment parameters of h-BN/WS2heterojunctions for analyzing and designing h-BN/WS2based devices.
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影响因子:
3.2
作者:
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通讯作者:
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DOI:
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发表时间:
2014-03
期刊:
Nature Reviews Methods Primers
影响因子:
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DOI:
10.5772/intechopen.88433
发表时间:
2019-08
期刊:
Smart Nanosystems for Biomedicine, Optoelectronics and Catalysis
影响因子:
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作者:
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通讯作者:
Hongcheng Ruan;Yu Huang;Yuqian Chen;F. Zhuge
DOI:
10.1088/0953-8984/16/12/025
发表时间:
2004-03
期刊:
Journal of Physics: Condensed Matter
影响因子:
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作者:
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通讯作者:
P. Yen;Yen-Ru Huang;K. Tiong