Determination of band alignment in two-dimensional h-BN/WS2 van der waals heterojunction by X-ray photoelectron spectroscopy

Determination of band alignment in two-dimensional h-BN/WS2 van der waals heterojunction by X-ray photoelectron spectroscopy
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X 射线光电子能谱测定二维 h-BN/WS2 范德华异质结中的能带排列

DOI:
10.1016/j.jallcom.2020.157301
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发表时间:
2021-02
影响因子:
6.2
通讯作者:
Yang Jianhong
Yang Jianhong
中科院分区:
材料科学2区
文献类型:
--
作者:
Xing Shu’an;Zhao Guijuan;Xu Yan;Wang Jie;Li Xunshuan;Yang Wenge;Liu Guipeng;Yang Jianhong

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通过h-BN和WS2单层膜的叠层制备了二维h-BN/WS2范德华异质结,并用X射线光电子能谱(XPS)测量了h-BN/WS2异质结的价带偏移(VBO)。利用h-BN和WS_2单分子膜的禁带宽度和VBO的测量值来确定导带偏移(CBO)。VBO和CBO的测量结果分别为3.39 ± 0.15 eV和0.57 ± 0.15 eV,揭示了I型带排列。h-BN/WS2异质结能带取向参数的测量对于h-BN/WS2基器件的分析和设计具有重要意义。
We have fabricated two-dimensional h-BN/WS2van der Waals heterojunctions by stacking h-BN and WS2monolayers, and experimentally measured the valence band offset (VBO) of h-BN/WS2heterojunction by X-ray photoelectron spectroscopy (XPS). The h-BN and WS2monolayers band gaps and the measured value of VBO were used to determine the conduction band offset (CBO). The measurement results of VBO and CBO are 3.39 ± 0.15 eV and 0.57 ± 0.15 eV, respectively, revealing a type-I band alignment. It is urgent to measure the band alignment parameters of h-BN/WS2heterojunctions for analyzing and designing h-BN/WS2based devices.
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