Strain-engineered inverse charge-funnelling in layered semiconductors.
Strain-engineered inverse charge-funnelling in layered semiconductors.
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DOI：
10.1038/s41467-018-04099-7
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发表时间：
2018-04-25
影响因子：
16.6
通讯作者：
Russo S
中科院分区：
文献类型：
--
作者：
De Sanctis A;Amit I;Hepplestone SP;Craciun MF;Russo S
由于外部电场而引起的电路中的电荷的控制对于在广泛的应用中的信息的交换、存储和操纵是普遍存在的。相反，在材料之间生长清洁界面的能力一直是工程内置电场的垫脚石，这些电场主要用于现代光电子学和光电子学。原子级薄的半导体的出现现在使获得电场的新方法成为可能，并揭示了新的电荷传输机制。在这里，我们报告的第一个直接电气观察的逆电荷漏斗效应，使确定性和空间分辨应变诱导电场在一张薄薄的HfS2。我们证明，这些空间变化的电场驱动的光电晶体管的通道中的电荷导致响应度的350%的增强。这些发现可以使高效光伏电池的知情设计成为可能。应变在半导体材料上的应用可以用来设计通过变化能隙的电场。在这里，作者观察到一个反电荷漏斗效应在原子薄的HfS2，使应变诱导电场。
The control of charges in a circuit due to an external electric field is ubiquitous to the exchange, storage and manipulation of information in a wide range of applications. Conversely, the ability to grow clean interfaces between materials has been a stepping stone for engineering built-in electric fields largely exploited in modern photovoltaics and opto-electronics. The emergence of atomically thin semiconductors is now enabling new ways to attain electric fields and unveil novel charge transport mechanisms. Here, we report the first direct electrical observation of the inverse charge-funnel effect enabled by deterministic and spatially resolved strain-induced electric fields in a thin sheet of HfS2. We demonstrate that charges driven by these spatially varying electric fields in the channel of a phototransistor lead to a 350% enhancement in the responsivity. These findings could enable the informed design of highly efficient photovoltaic cells. The application of strain to semiconducting materials can be used to engineer electric fields through a varying energy gap. Here, the authors observe an inverse charge-funnel effect in atomically thin HfS2, enabled by strain-induced electric fields.
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影响因子：
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