The robustness of the quantum spin Hall effect to the thickness fluctuation in HgTe quantum wells

The robustness of the quantum spin Hall effect to the thickness fluctuation in HgTe quantum wells
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量子自旋霍尔效应对 HgTe 量子阱厚度波动的鲁棒性

DOI:
10.1088/1674-1056/21/11/117301
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发表时间:
2012-11
期刊:
影响因子:
1.7
通讯作者:
Feng Shi-Ping
Feng Shi-Ping
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Guo Huai-Ming;Zhang Xiang-Lin;Feng Shi-Ping

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碲化汞量子威尔斯(QWs)是迄今为止唯一已知的二维拓扑绝缘体,量子自旋霍尔效应(QSHE)首先在QWs中实现。本文系统地研究了碲化汞量子阱的厚度涨落对QSHE的影响。我们从具有随机分布的恒定质量的情况开始,并且揭示了当组分的数目很小时,无序系统可以很好地由具有有效质量的虚拟均匀QW来描述。当这个数为无穷大且对应于真实的涨落时,我们发现QSHE不仅是鲁棒的,而且可以由相对较强的涨落产生。我们的结果表明,厚度起伏不会引起后向散射,QSHE对它是鲁棒的。
The quantum spin Hall effect (QSHE) was first realized in HgTe quantum wells (QWs), which remain the only known two-dimensional topological insulator so far. In this paper, we have systematically studied the effect of the thickness fluctuation of HgTe QWs on the QSHE. We start with the case of constant mass with random distributions, and reveal that the disordered system can be well described by a virtual uniform QW with an effective mass when the number of components is small. When the number is infinite and corresponds to the real fluctuation, we find that the QSHE is not only robust, but also can be generated by relatively strong fluctuation. Our results imply that the thickness fluctuation does not cause backscattering, and the QSHE is robust to it.
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