The robustness of the quantum spin Hall effect to the thickness fluctuation in HgTe quantum wells
The robustness of the quantum spin Hall effect to the thickness fluctuation in HgTe quantum wells
复制标题
量子自旋霍尔效应对 HgTe 量子阱厚度波动的鲁棒性
DOI:
10.1088/1674-1056/21/11/117301
复制
发表时间:
2012-11
影响因子:
1.7
通讯作者:
Feng Shi-Ping
中科院分区:
文献类型:
--
作者:
Guo Huai-Ming;Zhang Xiang-Lin;Feng Shi-Ping
The quantum spin Hall effect (QSHE) was first realized in HgTe quantum wells (QWs), which remain the only known two-dimensional topological insulator so far. In this paper, we have systematically studied the effect of the thickness fluctuation of HgTe QWs on the QSHE. We start with the case of constant mass with random distributions, and reveal that the disordered system can be well described by a virtual uniform QW with an effective mass when the number of components is small. When the number is infinite and corresponds to the real fluctuation, we find that the QSHE is not only robust, but also can be generated by relatively strong fluctuation. Our results imply that the thickness fluctuation does not cause backscattering, and the QSHE is robust to it.
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