Theoretical study of strain-induced modulation of the bandgap in SiC
Theoretical study of strain-induced modulation of the bandgap in SiC
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SiC带隙应变诱导调制的理论研究
DOI：
10.7567/jjap.57.071301
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发表时间：
2018
影响因子：
1.5
通讯作者：
K. Shiraishi
中科院分区：
文献类型：
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作者：
K. Chokawa;K. Shiraishi
4 H-SiC MOSFET在（0001）界面处的低电子迁移率是高性能功率器件的一个问题，并且一些实验已经显示出通过使用其他界面的更高的电子迁移率。我们研究了应变引起的带隙调制，并表明不同的带隙调制发生在不同的SiC多型体。此外，我们还发现双轴应变引起的调制比静水应变引起的调制大，而对于4 H-SiC，和面内的双轴应变引起的调制比（0001）面内的大。调制带隙作为电子陷阱，降低了4 H-SiC MOSFET的电子迁移率。然而，当考虑到4 H-SiC的本征性质时，4 H-SiC MOSFET在（0001）界面上的带隙调制效应强烈，电子态数增加。因此，对于高电子迁移率的4 H-SiC MOSFET，必须使用适当的界面取向。
The low electron mobility of 4H-SiC MOSFETs at the (0001) interface is a problem for high-performance power devices, and some experiments have shown higher electron mobilities by using other interfaces. We studied bandgap modulation induced by strain and showed that different bandgap modulations occur in different SiC polytypes. Moreover, we found that biaxial strain causes a larger modulation than hydrostatic strain, and that biaxial strain in the and planes causes a larger modulation than that in the (0001) plane for 4H-SiC. The modulated bandgap acts as electron traps and degrades the electron mobility of 4H-SiC MOSFETs. However, the effects of bandgap modulation appear strongly and the number of electronic states increases in 4H-SiC MOSFETs on the (0001) interface when considering the intrinsic nature of 4H-SiC. Therefore, appropriate interface orientations must be used for high-electron-mobility 4H-SiC MOSFETs.
SiC (0001)、(11-20)、(1-100) MOSFET 中霍尔迁移率的体层浓度依赖性
DOI：
--
发表时间：
2022
期刊：
影响因子：
--
作者：
伊藤 滉二;田中 一;堀田 昌宏;須田 淳;木本 恒暢
通讯作者：
木本 恒暢