Sodium-Doped ZnO Nanowires Grown by High-pressure PLD and their Acceptor-Related Optical Properties
Sodium-Doped ZnO Nanowires Grown by High-pressure PLD and their Acceptor-Related Optical Properties
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高压 PLD 生长的钠掺杂 ZnO 纳米线及其受主相关光学性质
DOI：
10.1111/jace.12941
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发表时间：
2014-07
影响因子：
3.9
通讯作者：
Cai, Weiping
中科院分区：
文献类型：
--
作者：
Cao, Bingqiang;Dai, Zhengfei;Duan, Guotao;Cai, Weiping
采用高压脉冲激光沉积法，以溅射金颗粒为催化剂，在硅衬底上生长了钠掺杂ZnO（ZnO：Na）纳米线。X射线衍射谱和X射线光电子能谱证实了钠掺杂剂在ZnO纳米线中的引入。利用扫描电子显微镜、高分辨透射电子显微镜和拉曼光谱研究了钠掺杂对ZnO纳米线形貌和微结构的影响。ZnO：Na纳米线的详细光致发光研究揭示了钠受体相关的特征峰，例如，中性受体结合激子发射（A0X，3.356 eV），自由到中性受体发射（e，A0，3.314 eV），和供体到受体对发射（DAP，3.241 eV）。这表明，钠掺杂诱导稳定的受主能级的结合能为133 meV的ZnO：Na纳米线。
Sodium-doped ZnO (ZnO:Na) nanowires were grown with a high-pressure pulsed-laser deposition process on silicon substrates using sputtered gold particles as catalysts. The introduction of sodium dopants into ZnO nanowires was confirmed by both X-ray diffraction spectrum and X-ray photoelectron spectroscopy. The morphology and microstructural changes in ZnO nanowires due to sodium doping were investigated with scanning electron microscope, high-resolution transmission electron microscope, and Raman spectrum. Detailed photoluminescence studies of ZnO:Na nanowires revealed characteristic sodium acceptor-related peaks, for example, neutral acceptor-bound exciton emission (A0X, 3.356 eV), free-to-neutral-acceptor emission (e, A0, 3.314 eV), and donor-to-acceptor pair emission (DAP, 3.241 eV). This indicated that sodium doping induces stable acceptor level with a binding energy of 133 meV in ZnO:Na nanowires.
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影响因子：
4
作者：
Jiandong Ye;S. Gu;S. M. Zhu;S. Liu;Youliao Zheng;R. Zhang;Yue-chun Shi;Qingchao Chen;H. Yu;Y. Ye
通讯作者：
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影响因子：
3.9
作者：
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通讯作者：
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影响因子：
3.7
作者：
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通讯作者：
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影响因子：
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作者：
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通讯作者：
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