Electric Field Control of Spin-Orbit Torque Magnetization Switching in a Spin-Orbit Ferromagnet Single Layer.
Electric Field Control of Spin-Orbit Torque Magnetization Switching in a Spin-Orbit Ferromagnet Single Layer.
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DOI：
10.1002/advs.202301540
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发表时间：
2023-08
期刊：
影响因子：
15.1
通讯作者：
Tanaka, Masaaki
中科院分区：
文献类型：
--
作者：
Jiang, Miao;Asahara, Hirokatsu;Ohya, Shinobu;Tanaka, Masaaki
关键词：
为了获得理想的自旋轨道转矩（SOT）大小用于磁化开关，并利用SOT实现多功能自旋逻辑和存储器件，控制SOT的操作至关重要。在传统的SOT双层体系中，研究人员试图通过界面氧化、自旋轨道有效场和有效自旋霍尔角的调制来控制其磁化开关行为；然而，交换效率受到接口质量的限制。在具有强自旋轨道相互作用的单层铁磁体（即自旋轨道铁磁体）中，电流诱导的有效磁场可用于诱导SOT。在自旋轨道铁磁体系统中，电场应用有可能通过载流子浓度调制来操纵自旋轨道相互作用。在这项工作中，证明了SOT的磁化开关可以通过使用（Ga, Mn）As单层的外电场成功地控制。通过施加栅极电压，开关电流密度可以被稳定地、可逆地控制，其比例可达14.5%，这归功于界面电场的成功调制。这项工作的发现有助于进一步理解磁化开关机制，并推动栅极控制SOT器件的发展。为利用外加电场有效控制自旋轨道铁磁体单层的全自旋轨道转矩磁化开关提供了一种很有前景的技术。这项工作有助于从有效场的角度理解磁化转换的机制，为将新型高效低功率自旋电子存储器件与传统场效应半导体技术相结合铺平了道路。
To achieve a desirable magnitude of spin–orbit torque (SOT) for magnetization switching and realize multifunctional spin logic and memory devices utilizing SOT, controlling the SOT manipulation is vitally important. In conventional SOT bilayer systems, researchers have tried to control the magnetization switching behavior via interfacial oxidization, modulation of spin–orbit effective field, and effective spin Hall angle; however, the switching efficiency is limited by the interface quality. A current‐induced effective magnetic field in a single layer of a ferromagnet with strong spin–orbit interactions, the so‐called spin–orbit ferromagnet, can be utilized to induce SOT. In spin–orbit ferromagnet systems, electric field application has the potential for manipulating the spin–orbit interactions via carrier concentration modulation. In this work, it is demonstrated that SOT magnetization switching can be successfully controlled via an external electric field using a (Ga, Mn)As single layer. By applying a gate voltage, the switching current density can be solidly and reversibly manipulated with a large ratio of 14.5%, which is ascribed to the successful modulation of the interfacial electric field. The findings of this work help further the understanding of the magnetization switching mechanism and advance the development of gate‐controlled SOT devices. A promising technique is offered for efficient control of full spin–orbit torque magnetization switching in a spin–orbit ferromagnet single layer via an external electric field. This work helps understand the mechanism of magnetization switching from the viewpoint of the effective field, which paves the way toward combining novel high‐efficiency and low‐power spintronics memory devices and conventional field‐effect semiconductor technologies.
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