The effects of deep level traps on the electrical properties of semi-insulating CdZnTe
The effects of deep level traps on the electrical properties of semi-insulating CdZnTe
复制标题
深能级陷阱对半绝缘CdZnTe电性能的影响
DOI：
10.1063/1.4863465
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发表时间：
2014-01
影响因子：
3.2
通讯作者：
Jie Wanqi
中科院分区：
文献类型：
--
作者：
Zha Gangqiang;Yang Jian;Xu Lingyan;Feng Tao;Wang Ning;Jie Wanqi
Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy Et can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance can be explained using the deep trap model.
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影响因子：
2.1
作者：
R. Soundararajan;K. Lynn;Salah Awadallah;C. Szeles;S. Wei
通讯作者：
R. Soundararajan;K. Lynn;Salah Awadallah;C. Szeles;S. Wei
影响因子：
1.5
作者：
M. Fiederle;V. Babentsov;J. Franc;A. Fauler;J. Konrath
通讯作者：
M. Fiederle;V. Babentsov;J. Franc;A. Fauler;J. Konrath
影响因子：
3.2
作者：
M. Pavlović;U. Desnica
通讯作者：
M. Pavlović;U. Desnica
影响因子：
1.8
作者：
Szeles, C
通讯作者：
Szeles, C
影响因子：
3.7
作者：
Du, Mao-Hua;Takenaka, Hiroyuki;Singh, David J.
通讯作者：
Singh, David J.