Metal organic chemical vapour deposition regrown large area GaN‐on‐GaN current aperture vertical electron transistors with high current capability
Metal organic chemical vapour deposition regrown large area GaN‐on‐GaN current aperture vertical electron transistors with high current capability
复制标题
金属有机化学气相沉积再生长大面积 GaNâonâGaN 电流孔径垂直电子晶体管，具有高电流能力
DOI：
10.1049/ell2.12068
复制
发表时间：
2021
影响因子：
1.1
通讯作者：
O. Ambacher
中科院分区：
文献类型：
--
作者：
P. Döring;R. Driad;R. Reiner;P. Waltereit;M. Mikulla;O. Ambacher
在这项工作中，一个大面积的电流孔径垂直电子晶体管（CAVET）的金属有机化学气相沉积（MOCVD）生长在体GaN衬底上。电流阻挡层（CBL）通过低剂量Mg注入形成，以允许在标准生长条件下进行MOCVD再生长，同时作为原位退火工艺。针对栅孔重叠（LGAP）对小型晶体管进行评估，以获得稳健的布局，从而抑制源漏泄漏。采用优化的栅孔尺寸，并结合常见的梳状结构设计和已建立的横向HEMT的栅源模块来演示大面积CAVET梳状结构。多指器件的导通电阻RON = 2.15 Ω，芯片面积A = 2 × 2 mm²。大面积CAVET在漏源电压为VDS = 45 V时的最大漏电流为ID，MAX= 20.1 A，对应功率为P = 900 W。
In this work, a large area current aperture vertical electron transistor (CAVET) is fabricated on bulk GaN substrates grown by metal organic chemical vapour deposition (MOCVD). The current blocking layer (CBL) is formed by low dose Mg‐implantation to allow for MOCVD regrowth under standard growth conditions, which simultaneously serves as an in‐situ annealing process. Small transistors are evaluated regarding gate‐aperture overlap (LGAP) to derive a robust layout in order to suppress source‐drain leakage. Optimized gate‐aperture dimensions are adopted and combined with a common comb structure design and the established gate‐source module of the lateral HEMT to demonstrate a large area CAVET comb structure. The multi‐finger device exhibits an on‐state resistance ofRON= 2.15 Ω and a chip area ofA= 2 × 2 mm². The large area CAVET reveals a maximum drain current ofID,MAX= 20.1 A at a drain‐source voltage ofVDS= 45 V, corresponding to a power ofP= 900 W.
准垂直电流孔径垂直电子晶体管结构的生长和制造
DOI：
10.1002/pssa.202000379
发表时间：
2020
期刊：
physica status solidi (a)
影响因子：
--
作者：
P. Döring;R. Driad;S. Leone;S. Müller;P. Waltereit;L. Kirste;V. Polyakov;M. Mikulla;O. Ambacher
通讯作者：
O. Ambacher
CAVET 制造的 MOCVD 和 MBE 再生长比较
影响因子：
2.9
作者：
S. Kotzea;W. Witte;B. Godejohann;Mathias Marx;M. Heuken;H. Kalisch;R. Aidam;A. Vescan
通讯作者：
A. Vescan