Stoichiometry-modulated dual epsilon-near-zero characteristics of niobium nitride films
Stoichiometry-modulated dual epsilon-near-zero characteristics of niobium nitride films
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氮化铌薄膜的化学计量调制双ε-近零特性
DOI：
10.1016/j.apsusc.2020.147981
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发表时间：
2021-01
影响因子：
6.7
通讯作者：
Wang Zhi
中科院分区：
文献类型：
--
作者：
Ran Yujing;Lu Huiping;Zhao Shujun;Guo Qian;Gao Chang;Jiang Zhaotan;Wang Zhi
Metal nitride is an important new type of Epsilon-near-zero (ENZ) materials applicable in visible and near infrared. In this study, NbN x films with different nitrogen content R n were prepared by magnetron sputtering. The results show that the films are stoichiometry-tunable on the lattice constant, chemical state, and plasmonic properties. Importantly, NbN x films exhibit dual ENZ behavior tunable in the range of 400 to 1000 nm, and the absolute value of the negative real part of epsilon is below 1.0. Increased R n reduces the screened plasma frequency and narrows the ENZ range by introducing different non-stoichiometric defects. The result of first-principle calculation show that non-stoichiometric defects affect the band structure and the density of states, and the cation vacancies are the main defects tailoring the ENZ behavior of the NbN x films. As examples of the application, we provide conceptual designs of angular filter and perfect absorber, the performances of which can be enhanced by NbN x films. NbN x is proved to be an ENZ material with simple composition, easy preparation and high tunability in a wide range. The tunable dual ENZ characteristics of NbN x films highlight their significant future in visible and near infrared nanophotonic applications.
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影响因子：
3.7
作者：
Catellani, Alessandra;Calzolari, Arrigo
通讯作者：
Calzolari, Arrigo
影响因子：
2.2
作者：
S. Kurth;J. Perdew
通讯作者：
S. Kurth;J. Perdew
影响因子：
6.2
作者：
M. Novaković;M. Popović;E. Schmidt;Philipp Schöppe;M. Mitrić;N. Bibić;C. Ronning;Z. Rakočević
通讯作者：
M. Novaković;M. Popović;E. Schmidt;Philipp Schöppe;M. Mitrić;N. Bibić;C. Ronning;Z. Rakočević
影响因子：
4
作者：
M. Nasir;S. Peruch;N. Vasilantonakis;William P. Wardley;W. Dickson;G. Wurtz;A. Zayats
通讯作者：
M. Nasir;S. Peruch;N. Vasilantonakis;William P. Wardley;W. Dickson;G. Wurtz;A. Zayats
影响因子：
2.8
作者：
Wang, Yu;Capretti, Antonio;Dal Negro, Luca
通讯作者：
Dal Negro, Luca