Comparative advantages of Zn-Cu-In-S alloy QDs in the construction of quantum dot-sensitized solar cells.
Comparative advantages of Zn-Cu-In-S alloy QDs in the construction of quantum dot-sensitized solar cells.
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Zn-Cu-In-S合金量子点在构建量子点敏化太阳能电池中的比较优势
DOI:
10.1039/c7ra12321c
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发表时间:
2018-01-16
期刊:
影响因子:
3.9
通讯作者:
Zhong, Xinhua
中科院分区:
文献类型:
--
作者:
Yue, Liang;Rao, Huashang;Du, Jun;Pan, Zhenxiao;Yu, Juan;Zhong, Xinhua
Alloyed structures of quantum dot light-harvesting materials favor the suppression of unwanted charge recombination as well as acceleration of the charge extraction and therefore the improvement of photovoltaic performance of the resulting solar cell devices. Herein, the advantages of Zn–Cu–In–S (ZCIS) alloy QD serving as light-harvesting sensitizer materials in the construction of quantum dot-sensitized solar cells (QDSCs) were compared with core/shell structured CIS/ZnS, as well as pristine CIS QDs. The built QDSCs with alloyed Zn–Cu–In–S QDs as photosensitizer achieved an average power conversion efficiency (PCE) of 8.47% (Voc = 0.613 V, Jsc = 22.62 mA cm−2, FF = 0.610) under AM 1.5G one sun irradiation, which was enhanced by 21%, and 82% in comparison to those of CIS/ZnS, and CIS based solar cells, respectively. In comparison to cell device assembled by the plain CIS and core/shell structured CIS/ZnS, the enhanced photovoltaic performance in ZCIS QDSCs is mainly ascribed to the faster photon generated electron injection rate from QD into TiO2 substrate, and the effective restraint of charge recombination, as confirmed by incident photon-to-current conversion efficiency (IPCE), open-circuit voltage decay (OCVD), as well as electrochemical impedance spectroscopy (EIS) measurements. Benefiting from the accelerative electron injection and retarded charge recombination, Zn–Cu–In–S alloy QD based QDSC achieved a PCE of 8.55%, which is 21%, and 82% higher than those of CIS/ZnS, and pristine CIS QDs based solar cells, respectively.
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影响因子:
11.9
作者:
Jiao, Shuang;Wang, Jin;Zhong, Xinhua
通讯作者:
Zhong, Xinhua
影响因子:
3.7
作者:
Hodes, Gary
通讯作者:
Hodes, Gary
影响因子:
17.1
作者:
Akkerman, Quinten A.;Genovese, Alessandro;Lesnyak, Vladimir
通讯作者:
Lesnyak, Vladimir
影响因子:
17.1
作者:
Gonzalez-Pedro, Victoria;Xu, Xueqing;Bisquert, Juan
通讯作者:
Bisquert, Juan
影响因子:
15
作者:
Bisquert, J;Zaban, A;Mora-Seró, I
通讯作者:
Mora-Seró, I