All-covalently-implanted FETs with ultrahigh solvent resistibility and exceptional electrical stability, and their applications for liver cancer biomarker detection
All-covalently-implanted FETs with ultrahigh solvent resistibility and exceptional electrical stability, and their applications for liver cancer biomarker detection
复制标题
具有超高耐溶剂性和出色电稳定性的全共价注入 FET 及其在肝癌生物标志物检测中的应用
DOI:
10.1039/d0tc01385d
复制
发表时间:
2020-06
影响因子:
6.4
通讯作者:
Hu Wenping
中科院分区:
文献类型:
--
作者:
Zhang Congcong;Cheng Shanshan;Si Ke;Wang Nannan;Wang Yong;Chen Penglei;Dong Huanli;Hu Wenping
While tremendous progress has been made in numerous prototype high-performance field-effect transistors (FETs) during the last several decades, the inauguration of innovative FETs with ultrahigh solvent resistibility and exceptional electrical stability still remains a formidable challenge. In terms of a proof-of-concept of all-covalent FETs with both covalently-rooted source/drain electrodes and semiconductor layers, we herein report that these issues could be feasibly overcome. Taking graphene-based FETs as a paradigm, we demonstrate that the electrical characteristics of the thus-schemed all-covalently-implanted devices display negligible fluctuations even after the whole devices are immersed and ultrasonicated for 100 minutes successively in 10 kinds of common solvents (1000 minutes in total). The shelf life of the as-configured FETs reaches as long as 24 months, wherein negligible degradation could be observed even after the devices are stored for two years under ambient conditions without any protection. In virtue of these characteristics, we additionally demonstrate that our all-covalent FETs could work as high-quality biosensors of outstanding reproducibility and robustness for a label-free diagnosis of liver cancer biomarker. Our new FETs are essentially different from their traditional counterparts in that their all-covalent configuration characteristics afford them with ultrahigh solvent resistibility and exceptional electrical stability. This opens up new perspectives and a bright future for the further functionalization, integration, industrialization and commercialization of FETs, wherein multistep post-productions are inevitably encountered in practice. Beyond graphene-based FETs, our all-covalent concept might be expanded to other types of electronic materials/devices via sophisticated molecular engineering.
登录
查看更多内容
影响因子:
2.6
作者:
He Yan;Zhu Lin;Liu Yan;Ma Jia-Nan;Han Dong-Dong;Jiang Hao-Bo;Han Bing;Ding Hong;Zhang Yong-Lai
通讯作者:
Zhang Yong-Lai
影响因子:
10.8
作者:
Shuai Wang;P. K. Ang;Ziqian Wang;A. Tang;J. Thong;K. Loh
通讯作者:
Shuai Wang;P. K. Ang;Ziqian Wang;A. Tang;J. Thong;K. Loh
影响因子:
15
作者:
Lee, Wi Hyoung;Park, Jaesung;Cho, Kilwon
通讯作者:
Cho, Kilwon
影响因子:
15
作者:
HUMMERS, WS;OFFEMAN, RE
通讯作者:
OFFEMAN, RE
影响因子:
--
作者:
Lin, Yue;Jin, Jie;Song, Mo
通讯作者:
Song, Mo