Neuron-MOS multiple-valued memory technology for intelligent data processing
Neuron-MOS multiple-valued memory technology for intelligent data processing
复制标题
用于智能数据处理的 Neuron-MOS 多值存储技术
DOI：
10.1109/isscc.1994.344645
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
T. Ohmi
中科院分区：
文献类型：
--
作者：
R. Au;T. Yamashita;T. Shibata;T. Ohmi
本文介绍了RAM技术，它将模拟输入数据量化，并以多值数据的形式存储，以便进行智能数据处理。此外，还可以在存储单元级别执行根据关联度的数据关联和分类，而无需任何软件操作。通过神经元MOS(VMOS)晶体管的独特电路配置，存储单元实现了这种智能功能。VMOS晶体管是一种模拟生物神经元活动的多功能设备。通过采用标准双层多晶硅工艺制造的测试器件对这些概念进行了实验验证。虽然电路是针对4值系统进行说明的，但设计也可以扩展到8值(或更大)系统。
This paper presents RAM technology that quantizes analog input data and stores it as multi-valued data for intelligent data processing. Moreover, data association and classification according to the degree of association can also be performed at the memory-cell level without any software manipulation. The implementation of such intelligent functions by a memory cell has been facilitated by unique circuit configurations of the neuron MOS (vMOS) transistor, a multi-functional device that simulates the action of biological neurons. These concepts are experimentally verified by test devices fabricated by a standard double-polysilicon CMOS process. Although the circuits are explained for a 4-valued system, the designs can be extended to an 8-valued (or greater) system.<<ETX>>
影响因子：
3.1
作者：
SHIBATA, T;OHMI, T
通讯作者：
OHMI, T