Optical and interface characteristics of Al0.56Ga0.44N/Al0.62Ga0.38N multiquantum wells with ∼280 nm emission grown by plasma-assisted molecular beam epitaxy
Optical and interface characteristics of Al0.56Ga0.44N/Al0.62Ga0.38N multiquantum wells with ∼280 nm emission grown by plasma-assisted molecular beam epitaxy
复制标题
等离子体辅助分子束外延生长的〜280nm发射的Al0.56Ga0.44N/Al0.62Ga0.38N多量子阱的光学和界面特性
DOI：
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发表时间：
2019
影响因子：
1.8
通讯作者：
P. Bhattacharya
中科院分区：
文献类型：
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作者：
A. Aiello;A. Pandey;A. Bhattacharya;J. Gim;Xianhe Liu;D. Laleyan;R. Hovden;Z. Mi;P. Bhattacharya
影响因子：
4
作者：
P. Reddy;I. Bryan;Z. Bryan;J. Tweedie;S. Washiyama;R. Kirste;S. Mita;R. Collazo;Z. Sitar
通讯作者：
P. Reddy;I. Bryan;Z. Bryan;J. Tweedie;S. Washiyama;R. Kirste;S. Mita;R. Collazo;Z. Sitar