A Novel SRAM PUF Stability Improvement Method Using Ionization Irradiation
A Novel SRAM PUF Stability Improvement Method Using Ionization Irradiation
复制标题
一种利用电离辐射提高SRAM PUF稳定性的新方法
DOI：
10.3390/electronics9091498
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发表时间：
2020-09
期刊：
影响因子：
2.9
通讯作者：
Gang Dai
中科院分区：
文献类型：
--
作者：
Xu Zhang;Chunsheng Jiang;Ke Gu;Le Zhong;Wen Fang;Gang Dai
作为集成电路芯片指纹的基本元素之一，基于静态随机存取存储器的物理不可克隆功能(SRAM PUF)被认为是硬件安全电路的一个有吸引力的选择。商用SRAM芯片可用作低成本系统的PUF芯片。然而，大多数商用SRAM芯片中存在的失配非常小，这可能导致SRAM PUF的稳定性较差。针对这一问题，提出了一种利用总电离剂量(TID)效应提高商用SRAM芯片PUF稳定性的新方法。文中详细介绍了该方法的原理，并进行了仿真验证。然后，在一种商用SRAM芯片上进行了TID实验，验证了该方法可以减小芯片内汉明距离(？)在40-100Krad(二氧化硅)的电离剂量范围内提高了两个数量级，这是一个显著的稳定性改进。此外，综合考虑其他性能因素，40Krad(SiO_2)被认为是SRAM PUF的推荐电离剂量，它不仅使SRAM PUF的稳定性和均匀性达到近乎理想的值，而且将辐射损伤控制在有限的水平内。
As one of the fundamental elements of the fingerprints of integrated circuit chips, static random-access memory based physical unclonable function (SRAM PUF) has been regarded as an attractive option for hardware security circuits. Commercial SRAM chips could be used as PUF chips for low cost systems. However, the mismatches existing in most commercial SRAM chips are quite small, which could result in poor stability of SRAM PUF. To address this issue, this paper proposes a novel SRAM PUF stability improvement method using total ionization dose (TID) effect for commercial SRAM chips. The principles of this new method are presented in detail and verified by simulations. Thereafter, the TID experiments are carried out on one kind of commercial SRAM chips and validate that this novel method could reduce the intra-chip hamming distance (??_?????) by two orders of magnitude within the ionizing dose range of 40–100 Krad (SiO2), which is a significant stability improvement. Furthermore, considering the trade-offs of other performance factors, 40 Krad (SiO2) has been regarded as the recommended ionizing dose, which not only makes the stability and uniformity of SRAM PUF attain almost ideal values but also keeps the radiation-induced damage within a limited level.
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影响因子：
5.5
作者：
Cao, Yameng;Robson, Alexander J.;Young, Robert J.
通讯作者：
Young, Robert J.
DOI：
10.1007/978-1-4614-5040-5
发表时间：
2012-10
期刊：
--
影响因子：
--
作者：
C. Bhm;M. Hofer
通讯作者：
C. Bhm;M. Hofer
影响因子：
2.9
作者：
Lee, Minwoong;Cho, Seongik;Kim, Jongyeol
通讯作者：
Kim, Jongyeol
DOI：
10.1109/patmos.2018.8464143
发表时间：
2018-07
期刊：
2018 28th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS)
影响因子：
--
作者：
Mohd Syafiq Mispan;Shengyu Duan;Basel Halak;Mark Zwolinski
通讯作者：
Mohd Syafiq Mispan;Shengyu Duan;Basel Halak;Mark Zwolinski
影响因子：
2.9
作者：
Meznah A. Alamro;Khalid T. Mursi;Yu Zhuang;Ahmad O. Aseeri;M. S. Alkatheiri
通讯作者：
Meznah A. Alamro;Khalid T. Mursi;Yu Zhuang;Ahmad O. Aseeri;M. S. Alkatheiri