Study of Strain Induction for Metal–Oxide–Semiconductor Field-Effect Transistors using Transparent Dummy Gates and Stress Liners
Study of Strain Induction for Metal–Oxide–Semiconductor Field-Effect Transistors using Transparent Dummy Gates and Stress Liners
复制标题
使用透明虚拟栅极和应力衬垫的金属氧化物半导体场效应晶体管的应变感应研究
DOI：
10.1143/jjap.48.066508
复制
发表时间：
2009
影响因子：
1.5
通讯作者：
A. Ogura
中科院分区：
文献类型：
--
作者：
D. Kosemura;M. Takei;K. Nagata;H. Akamatsu;M. Kohno;Tatsuo Nishita;T. Nakanishi;A. Ogura
通过具有高空间和高波数分辨率的紫外拉曼光谱研究了具有伪栅极原硅酸四乙酯-二氧化硅 (TEOS-SiO2) 和 SiN 薄膜的样品的应变感应。紫外激光穿透对紫外光透明的虚拟栅极，这使我们能够评估金属氧化物半导体场效应晶体管 (MOSFET) 模型沟道中的应变。此外，我们还比较了通过有限元 (FE) 计算获得的应力分布与通过紫外拉曼测量获得的应力分布。线与空间图案样本和虚拟栅极样本中的应力分布存在差异；大的压缩（拉伸）应变集中在具有压缩（拉伸）应力衬里的虚拟栅极样品的通道边缘，尽管在线和空间图案样品中的通道边缘处同时存在拉伸和压缩应变。紫外拉曼光谱的结果与有限元计算得到的结果一致。
Strain induction was studied on a sample that had a dummy gate tetraethyl orthosilicate–silicon dioxide (TEOS–SiO2) and SiN film by UV-Raman spectroscopy with high spatial and high wave-number resolution. The UV laser penetrated through the dummy gate that was transparent to UV light, which enabled us to evaluate strain in the channel of the metal–oxide–semiconductor field-effect transistor (MOSFET) model. Furthermore, we compared stress profiles obtained by finite element (FE) calculations with those obtained by UV-Raman measurements. There was a difference between the stress profiles in the line-and-space pattern sample and in the dummy-gate sample; large compressive (tensile) strains were concentrated at the channel edges in the dummy-gate sample with the compressive (tensile) stress liner, although both tensile and compressive strains existed at the channel edge in the line-and-space pattern sample. The results from UV-Raman spectroscopy were consistent with those obtained by the FE calculation.
高性能金属氧化物半导体场效应晶体管的应变表征
DOI：
--
发表时间：
2008
期刊：
Jpn. J. Appl. Phys. 47
影响因子：
--
作者：
Disuke Kosemura;Atsushi Ogurat
通讯作者：
Atsushi Ogurat