Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi(2)O(2)Se.
Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi(2)O(2)Se.
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超高迁移率层状氧化物半导体 Bi2O2Se 中的电子结构和异常坚固的带隙
DOI：
10.1126/sciadv.aat8355
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发表时间：
2018-09
期刊：
影响因子：
13.6
通讯作者：
Chen Y
中科院分区：
文献类型：
--
作者：
Chen C;Wang M;Wu J;Fu H;Yang H;Tian Z;Tu T;Peng H;Sun Y;Xu X;Jiang J;Schröter NBM;Li Y;Pei D;Liu S;Ekahana SA;Yuan H;Xue J;Li G;Jia J;Liu Z;Yan B;Peng H;Chen Y
一种新型的层状氧化物半导体(Bi2O2Se)具有优异的电学性能，具有广阔的应用前景。在现代世界，半导体是影响我们日常生活的基本材料。具有高迁移率和适中禁带宽度的二维半导体因其在快速、低功耗和超小/薄电子器件中的潜在应用而在今天特别吸引人。研究了一种新型层状空气稳定氧化物半导体Bi2O2Se的电子结构，该半导体具有超高的迁移率(约2.8x105cm2/V⋅，2.0K)和中等禁带宽度(约0.8eV)。结合角度分辨光电子能谱和扫描隧道显微镜，我们绘制了Bi2O2Se的完整能带结构和关键参数(如有效质量、费米速度和带隙)。样品表面具有高达~50%的缺陷，其禁带宽度的不同寻常的空间均匀性使Bi2O2Se成为未来电子应用的理想半导体。此外，Bi2O2Se与有趣的钙钛矿氧化物(如铜酸盐高温超导体和常用的衬底材料SrTiO3)之间的结构兼容性进一步使Bi2O2Se与这些氧化物之间的异质结构成为实现新物理现象的平台，如拓扑超导、约瑟夫森结场效应晶体管、新型超导光电子学和新型激光器。
A new layered oxide semiconductor (Bi2O2Se) is found with excellent electronic properties for promising applications. Semiconductors are essential materials that affect our everyday life in the modern world. Two-dimensional semiconductors with high mobility and moderate bandgap are particularly attractive today because of their potential application in fast, low-power, and ultrasmall/thin electronic devices. We investigate the electronic structures of a new layered air-stable oxide semiconductor, Bi2O2Se, with ultrahigh mobility (~2.8 × 105 cm2/V⋅s at 2.0 K) and moderate bandgap (~0.8 eV). Combining angle-resolved photoemission spectroscopy and scanning tunneling microscopy, we mapped out the complete band structures of Bi2O2Se with key parameters (for example, effective mass, Fermi velocity, and bandgap). The unusual spatial uniformity of the bandgap without undesired in-gap states on the sample surface with up to ~50% defects makes Bi2O2Se an ideal semiconductor for future electronic applications. In addition, the structural compatibility between Bi2O2Se and interesting perovskite oxides (for example, cuprate high–transition temperature superconductors and commonly used substrate material SrTiO3) further makes heterostructures between Bi2O2Se and these oxides possible platforms for realizing novel physical phenomena, such as topological superconductivity, Josephson junction field-effect transistor, new superconducting optoelectronics, and novel lasers.
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