Growth, thermal, and spectroscopic properties of a Cr,Yb,Ho,Eu:YAP laser crystal
Growth, thermal, and spectroscopic properties of a Cr,Yb,Ho,Eu:YAP laser crystal
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Cr,Yb,Ho,Eu:YAP 激光晶体的生长、热和光谱特性
DOI：
10.1016/j.optmat.2014.03.029
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发表时间：
2014-06
影响因子：
3.9
通讯作者：
Shaotang Yin
中科院分区：
文献类型：
--
作者：
Huili Zhang;Dunlu Sun;Jianqiao Luo;Jiakang Chen;Huajun Yang;Jingzhong Xiao;Qingli Zhang;Shaotang Yin
采用提拉法生长了Cr，Yb，Ho，Eu：YAlO 3（雅普）激光晶体。研究了沿着a、B和c晶轴的热性能。结果表明，Cr，Yb，Ho，Eu：雅普晶体具有较大的各向异性热膨胀，晶体生长方向以基轴为宜。对德拜温度进行了拟合，并计算了晶格振动频率。光谱测量表明，Cr ~（3+）和Yb ~（3+）可以作为Ho ~（3+）离子的敏化剂，Eu ~（3+）离子可以起到钝化剂的作用，使激光下能级5I ~ 7的寿命从8.69 ms降低到1.89 ms，有利于降低激光阈值，提高激光转换效率。这些结果表明，Cr，Yb，Ho，Eu：雅普晶体是一种很有潜力的新晶体，可用于970 nm半导体激光器或脉冲闪光灯泵浦的2.8 ~ 3 μm激光输出。
A new Cr,Yb,Ho,Eu:YAlO3(YAP) laser crystal was successfully grown by the Czochralski method. Thermal properties were investigated along thea,b, andccrystalline axes. Results indicate that the Cr,Yb,Ho,Eu:YAP crystal has large anisotropic thermal expansion and that the suitable crystal growth direction is thebaxis. The Debye temperatures were fitted, and the lattice vibration frequencies were calculated. Spectroscopic measurements show that Cr3+and Yb3+can be used as sensitizers of Ho3+ions, and Eu3+ions can play a role of the deactivator in decreasing the lifetime of laser lower level5I7from 8.69 ms to 1.89 ms, which is beneficial in decreasing laser threshold and increasing laser conversion efficiency. All these findings suggest that the Cr,Yb,Ho,Eu:YAP crystal is a new potential candidate for realizing 2.8–3 μm laser output pumped by a 970 nm laser diode or pulsed flash lamp.
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影响因子：
4.5
作者：
B. Cockayne;B. Lent;J. Abell;I. R. Harris
通讯作者：
B. Cockayne;B. Lent;J. Abell;I. R. Harris
影响因子：
3.2
作者：
Diening, A;Kück, S
通讯作者：
Kück, S
影响因子：
2.5
作者：
W. Rabinovich;S. Bowman;B. Feldman;M. Winings
通讯作者：
W. Rabinovich;S. Bowman;B. Feldman;M. Winings
影响因子：
3.2
作者：
D. F. Sousa;F. Batalioto;M. Bell;S. Oliveira;L. Nunes
通讯作者：
D. F. Sousa;F. Batalioto;M. Bell;S. Oliveira;L. Nunes
DOI：
10.1007/s12200-008-0049-6
发表时间：
2008-10
期刊：
Frontiers of Optoelectronics in China
影响因子：
--
作者：
Baosong Wang;Hai-he Jiang;Xiande Jia;Qingli Zhang;D. Sun;S. Yin
通讯作者：
Baosong Wang;Hai-he Jiang;Xiande Jia;Qingli Zhang;D. Sun;S. Yin