The ultralight DEPFET pixel detector of the Belle II experiment
The ultralight DEPFET pixel detector of the Belle II experiment
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Belle II 实验的超轻 DEPFET 像素探测器
DOI：
10.1016/j.nima.2016.06.114
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发表时间：
--
影响因子：
1.4
通讯作者：
F. Lütticke
中科院分区：
文献类型：
--
作者：
F. Lütticke
现有日本香精工厂（位于日本筑波的KEKB）的升级改造正在建设中，预计将于2017年底投入使用。这台新的e+ e−机器（SuperKEKB）将提供比KEKB创造的亮度世界纪录高40倍的瞬时亮度。为了充分利用增加的事件数量，并在如此恶劣的环境中提供B介子衰变顶点的高精度测量，贝儿探测器将升级为贝儿II，其特点是基于DEPFET（耗尽P沟道场效应晶体管）技术的新硅顶点探测器，具有靠近相互作用点的两个像素层。该技术通过将场效应晶体管集成到完全耗尽的硅体中，将颗粒检测与像素内放大相结合。在贝儿II中，将使用减薄至75 μ m、低功耗和低固有噪声的DEPFET传感器。第一大薄多芯片生产模块已经生产和大型模块以及小型测试系统的表征结果将在此贡献。
An upgrade of the existing Japanese flavor factory (KEKB in Tsukuba, Japan) is under construction and foreseen for commissioning by the end of 2017. This new e+ e− machine (SuperKEKB) will deliver an instantaneous luminosity 40 times higher than the luminosity world record set by KEKB. To fully exploit the increased number of events and provide high precision measurements of B-meson decay vertices in such a harsh environment, the Belle detector will be upgraded to Belle II, featuring a new silicon vertex detector with two pixel layers close to the interaction point based on the DEPFET (DEpleted P-channel Field Effect Transistor) technology. This technology combines particle detection together with in-pixel amplification by integrating a field effect transistor into a fully depleted silicon bulk. In Belle II, DEPFET sensors thinned down to 75 μ m with low power consumption and low intrinsic noise will be used. The first large thin multi-chip production modules have been produced and characterization results on both large modules as well as small test systems will be presented in this contribution.
DOI：
10.1016/0168-9002(90)90470-q
发表时间：
1990-03-01
影响因子：
1.4
作者：
KEMMER, J;LUTZ, G;ZIEMANN, T
通讯作者：
ZIEMANN, T