Surface characterization of ion-enhanced implanted photoresist removal
Surface characterization of ion-enhanced implanted photoresist removal
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离子增强注入光刻胶去除的表面表征
DOI：
10.1116/1.2178367
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发表时间：
2006
影响因子：
1.4
通讯作者：
A. Al
中科院分区：
文献类型：
--
作者：
M. Kawaguchi;J. Papanu;Bo Su;M. Castle;A. Al
我们描述了高剂量注入深紫外光刻胶在双模氧等离子体处理前后的化学成分，其中远程射频等离子体源与射频偏压同时操作。拉曼光谱表明，地壳的有机组成包括sp2石墨和sp3类金刚石碳结构的混合物。高剂量离子注入减少了约50原子%的氢含量，通过氢前向散射测量，并解释了在外壳去除过程中观察到的光发射信号强度降低。从二次离子质谱剖面中提取的结壳厚度与先前的扫描电子显微镜表征很好地对应[川口等人，J.真空Sci.技术B（提交）]，并支持在硬化外壳和下面的光致抗蚀剂之间存在过渡层。砷注入光刻胶的角分辨x射线光电子能谱分析表明，双模等离子体处理...
We characterize the chemical constitutents of high dose implanted deep ultraviolet photoresist before and after dual-mode oxygen plasma processing, where a remote rf-plasma source is operated simultaneously with rf bias. Raman spectroscopy indicates that the organic composition of the crust comprises a mixture of sp2 graphite and sp3 diamondlike carbon structures. High dose ion implantation reduces the hydrogen content by about 50 at. % as measured by hydrogen forward scattering and explains the reduced optical emission signal intensity observed during crust removal. The crust thicknesses extracted from the secondary-ion-mass spectroscopy profile correspond well to prior scanning electron microscopy characterization [Kawaguchi et al., J. Vac. Sci. Technol. B (submitted)] and support the existence of a transitional layer between the hardened crust and the underlying photoresist. Angle-resolved x-ray photoelectron spectroscopy analysis of arsenic implanted photoresist shows that dual-mode plasma processing ...
通过红外光谱研究氢等离子体与氢化非晶碳膜的相互作用
DOI：
--
发表时间：
2007
期刊：
Thin Solid Films (In press)
影响因子：
--
作者：
六田朋美;近藤龍二;荒川純一;濱田俊之;迫田達也;Toshiyuki Hamada;Toshiyuki Hamada;荒川純一;六田朋美;迫田達也;六田朋美;Masanori Shinohara;Masanori Shinohara;Masanori Shinohara
通讯作者：
Masanori Shinohara