Low-voltage electron emission from thin [Pb(Mg1/3Nb2/3)O3]0.72 [PbTiO3]0.28 single crystals induced by ferroelectric polarization switching

Low-voltage electron emission from thin [Pb(Mg1/3Nb2/3)O3]0.72 [PbTiO3]0.28 single crystals induced by ferroelectric polarization switching
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铁电极化引起的薄 [Pb(Mg1/3Nb2/3)O3]0 72 [PbTiO3]0 28 单晶的低压电子发射

DOI:
10.1088/1367-2630/11/2/023004
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发表时间:
2009
影响因子:
3.3
通讯作者:
L. M. Eng
L. M. Eng
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
O. Mieth;H. Klumbies;V. S. Vidyarthi;G. Gerlach;K. Dörr;L. M. Eng

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报道了[Pb(Mg 1/3 Nb 2/3)O3] 0.72 [PbTiO 3] 0.2 8(PMN-PT)铁电薄膜单晶在低至2 0 V/40 0 μm的超低电压下的电子发射,开关循环次数达10 9次。PMN-PT样品用显示25 μm宽间隙区域的分裂金顶部电极制备。在两个顶部电极和底部电极之间施加正弦电压引发了来自差距区域的电子发射。在超高真空条件下,使用以90 °角布置的两个单电子计数器收集发射的电子。已经确定了两种排放制度。两者都是由于弱电子发射,但是,明确分开的发病完全铁电极化开关。这也证实了通过记录纳米级的铁电电滞回线,通过piezoresponse力显微镜。发射的电子被发现有一个广泛的能量分布与最大动能达到110和50 eV的施加开关电压为140和110 V,分别。我们的研究结果证实,极化反转是背后的电子发射过程中的薄PMN-PT样品的管理机制。此外,触发PMN-PT晶体电子发射所需的外加电场强度比文献中报道的大多数其他(铁电)材料低约10倍。
Electron emission from [Pb (Mg 1/3 Nb 2/3) O 3] 0.72 [PbTiO 3] 0.28 (PMN–PT) thin ferroelectric single crystals is reported at ultralow voltages down to 20 V per 400 μm thickness, and for up to 10 9 switching cycles. The PMN–PT samples were prepared with split gold top electrodes exhibiting a 25 μm wide gap region. Applying a sinusoidal voltage between the two top electrodes and the bottom electrode initiated electron emission from the gap region. The emitted electrons were collected under UHV conditions using two single electron counters arranged under an angle of 90. Two emission regimes have been identified. Both are attributable to weak electron emission, however, clearly separated by the onset of complete ferroelectric polarization switching. This is also confirmed by recording nanoscale ferroelectric hysteresis loops by means of piezoresponse force microscopy. The emitted electrons are found to have a broad energy distribution with the maximum kinetic energies reaching 110 and 50 eV for applied switching voltages of 140 and 110 V, respectively. Our results confirm that polarization reversal is the governing mechanism behind the electron-emission process in the thin PMN–PT samples. Also, the applied electric field strengths needed to trigger electron emission from the PMN–PT crystals are about 10 times lower compared to most other (ferroelectric) materials reported in the literature.
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