Microstructure of M-plane GaN epilayers grown on γ-LiAlO2 by plasma-assisted molecular beam epitaxy
Microstructure of M-plane GaN epilayers grown on γ-LiAlO2 by plasma-assisted molecular beam epitaxy
复制标题
等离子体辅助分子束外延在 γ-LiAlO2 上生长 M 面 GaN 外延层的微观结构
DOI：
10.1080/09500830412331271443
复制
发表时间：
2004
影响因子：
1.2
通讯作者：
K. Ploog
中科院分区：
文献类型：
--
作者：
T. Y. Liu;A. Trampert †;Y. Sun;O. Brandt;K. Ploog
本文报道了用等离子体辅助分子束外延技术在γ-LiAlO_2（100）衬底上生长的M面GaN（）外延层的缺陷结构。我们的透射电子显微镜研究表明，M-平面层主要包含本征和非本征基面堆垛层错。除此之外，在相对于界面倾斜的（）棱镜平面中检测到复杂类型的平面缺陷。该棱柱平面边界连接到与整个样品相交的堆垛层错。其位移矢量是沿着c轴的，因此不能减轻外延应变。螺纹位错分解成肖克利偏位错。的缺陷的微观结构的起源进行了讨论相对于失配应变和衬底表面形貌。
We report on the defect structure of M-plane GaN( ) epilayers grown on γ-LiAlO2(100) substrates by plasma-assisted molecular beam epitaxy. Our transmission electron microscopy studies reveal that the M-plane layers mainly contain intrinsic and extrinsic basal plane stacking faults. Beyond this, a complex type of planar defect is detected in the ( ) prism plane which is inclined with respect to the interface. This prism plane boundary is connected to stacking faults intersecting the whole sample. Its displacement vector is along the c axis and thus not able to relieve the epitaxial strain. Threading dislocations are dissociated into Shockley partials. The origin of the defect microstructure is discussed with respect to the misfit strain and the substrate surface morphology.
影响因子：
4
作者：
NAKAMURA, S;MUKAI, T;SENOH, M
通讯作者：
SENOH, M