Femtosecond laser-induced crystallization of amorphous N-doped Ge8Sb92 films and in situ characterization by coherent phonon spectroscopy
Femtosecond laser-induced crystallization of amorphous N-doped Ge8Sb92 films and in situ characterization by coherent phonon spectroscopy
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非晶 N 掺杂 Ge8Sb92 薄膜飞秒激光诱导结晶及相干声子光谱原位表征
DOI：
10.1063/1.4916726
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发表时间：
2015-04
期刊：
影响因子：
--
通讯作者：
Tianshu Lai
中科院分区：
文献类型：
--
作者：
Zhongyu Li;Yifeng Hu;Tianshu Lai
用相干声子谱原位研究了飞秒激光辐照下掺氮非晶Ge8Sb92薄膜的相变。我们观察到，当激光辐照能量密度达到一定阈值时，会出现一种新的相干光学声子（COP）模，表明激光诱导相变。此外，这种新的声子模式也已在热退火结晶的N掺杂Ge_8Sb_（92）薄膜中得到验证，证实了激光辐照诱导结晶的出现。通过测量激光晶化的N掺杂Ge8Sb92薄膜的COP动力学随泵浦能量密度的变化，发现COP的频率和寿命随泵浦能量密度的增加而降低，说明N掺杂Ge8Sb92薄膜具有良好的结晶性。还观察到非晶N掺杂Ge_8Sb_（92）薄膜的晶化温度随着N掺杂量的增加而升高。我们的研究结果表明，N掺杂的Ge_8Sb_（92）薄膜在光学相变存储器件中具有良好的应用前景。
Femtosecond laser-irradiation-induced phase change of amorphous N-doped Ge8Sb92 films is in situ studied by coherent phonon spectroscopy. We have observed that a new coherent optical phonon (COP) mode occurs as laser irradiation fluence reaches certain thresholds, indicating laser-induced phase changes. Additionally, this new phonon mode has also been verified in heat-annealing-crystallized N-doped Ge8Sb92 films, confirming the emergence of laser-irradiation-induced crystallization. By measuring the pump fluence dependence of COP dynamics in laser-crystallized N-doped Ge8Sb92 films, we found that the frequency and lifetime of COP decrease with the increasing of pump fluence, which suggests good crystallinity in laser-crystallized N-doped Ge8Sb92 films. It has also been observed that the crystallization temperature of amorphous N-doped Ge8Sb92 films increases with N-doping content. Our results indicate promising applications of N-doped Ge8Sb92 films in optical phase-change memory devices.
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