Rapid and facile fabrication of conducting monolayer reduced graphene oxide films by methane plasma-assisted reduction
Rapid and facile fabrication of conducting monolayer reduced graphene oxide films by methane plasma-assisted reduction
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通过甲烷等离子体辅助还原快速简便地制备导电单层还原氧化石墨烯薄膜
DOI：
10.1016/j.apsusc.2021.151022
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发表时间：
2021
影响因子：
6.7
通讯作者：
Yoshimura Masamichi
中科院分区：
文献类型：
--
作者：
Morikuni Yuki;Kanishka H. De Silva K.;Viswanath Pamarti;Hara Masanori;Yoshimura Masamichi
在这篇研究文章中，我们报告了一种在几分钟内通过甲烷等离子体处理还原的导电还原氧化石墨烯（rGO）单层薄膜的制造方法，并通过导电原子力显微镜（C-AFM）对局部电导率进行纳米级表征，实现了其在高度透明导电电极中的适用性。通过简单的旋涂方法制备了连续单层氧化石墨烯（GO）薄膜，并通过甲烷等离子体处理还原含氧基团并同时恢复晶格缺陷。 C-AFM 获得的当前图像提供了有关薄片电导率的详细信息，具体取决于等离子体照射时间。此外，拉曼光谱中 G' 带的出现证实了晶格缺陷的恢复，这与当前图像相关，而在不存在甲烷的情况下，在类似持续时间的真空退火样品中没有观察到 G' 带或当前图像。这种快速简便的方法提供了一种通过短期等离子体处理来制造导电单层 rGO 薄膜的方法，允许利用低熔点基材形成柔性导电石墨烯基薄膜。
In this research article, we report a method to fabricate conducting reduced graphene oxide (rGO) monolayer films reduced by methane plasma treatment within few minutes and the nanoscale characterization of local conductivity via conductive atomic force microscopy (C-AFM), realizing their applicability in highly transparent conducting electrodes. Continuous monolayer graphene oxide (GO) films were fabricated by a simple spin-coating method and reduction of oxygen-containing groups with simultaneous lattice defect restoration was done by methane plasma treatment. Current images obtained by C-AFM provide detailed information about the conductivity through the flakes depending on the plasma irradiation time. Moreover, lattice defect restoration was confirmed by the appearance of the G’-band in Raman spectra, which is in correlation with current images, whereas no G’-band or current image was observed in vacuum annealed samples at similar durations in the absence of methane. This rapid and facile method offers a way to fabricate conductive monolayer rGO films by a short-term plasma treatment allowing to utilize low melting point substrates to form flexible conductive graphene-based films.
影响因子：
1.5
作者：
K. Kanishka;H. De Silva;Hsin-Hui Huang;Seiya Suzuki;M. Yoshimura
通讯作者：
K. Kanishka;H. De Silva;Hsin-Hui Huang;Seiya Suzuki;M. Yoshimura
影响因子：
6.2
作者：
Pamarti Viswanath;K. K. H. De Silva-K.;Y. Morikuni;M. Yoshimura
通讯作者：
Pamarti Viswanath;K. K. H. De Silva-K.;Y. Morikuni;M. Yoshimura
用于透明导电薄膜的大面积氧化石墨烯片的高效制备
影响因子：
17.1
作者：
Zhao, Jinping;Pei, Songfeng;Cheng, Hui-Ming
通讯作者：
Cheng, Hui-Ming