Formation of high-density hexagonal networks of InGaAs ridge quantum wires by atomic hydrogen-assisted selective molecular beam epitaxy
Formation of high-density hexagonal networks of InGaAs ridge quantum wires by atomic hydrogen-assisted selective molecular beam epitaxy
复制标题
原子氢辅助选择性分子束外延形成高密度六方网络InGaAs脊量子线
DOI：
10.1016/s0169-4332(01)00881-9
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发表时间：
2002
影响因子：
6.7
通讯作者：
H. Hasegawa
中科院分区：
文献类型：
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作者：
A. Ito;T. Muranaka;Chao Jiang;H. Hasegawa
研究了氢原子束辅助选择分子束外延生长InGaAs脊型量子线六方网络结构的可行性，并将其应用于基于二元判决图结构的新型六方量子电路中。通过扫描电子显微镜、原子力显微镜、荧光光谱和化学发光等测试手段对所制备的结构进行了详细的表征。通过采用台面方向为〈10 0〉-〈1̄1 0〉和〈5 10〉-〈1̄1 0〉的图案化衬底，结合优化的H∗辅助选择性分子束外延，实现了细小到亚微米间距的锐利而均匀的InGaAs脊结构的六方网络.在脊形结构上成功地形成了嵌入型InGaAsQWR六角网络，有望实现大于108 cm−2的节点器件密度。
Feasibility of growth of InGaAs ridge quantum wire (QWR) hexagonal network structures by atomic hydrogen (H∗)-assisted selective molecular beam epitaxy (MBE) is investigated for use in novel hexagonal quantum circuits based on the binary-decision diagram (BDD) architecture. The fabricated structures were characterized in detail by SEM, AFM, PL and CL measurements. By using patterned substrates with mesa-pattern directions of 〈100〉–〈 1 ̄ 1 0〉 and 〈510〉–〈 1 ̄ 1 0〉 together with optimized H∗-assisted selective MBE, hexagonal networks of the sharp and uniform InGaAs ridge structures were realized down to submicron pitches. Embedded InGaAs QWR hexagonal networks were successfully formed on the ridge structures, giving prospects of realizing a node device density lager than 108cm−2.
T.Muranaka：“通过在 InP 图案化衬底上选择性分子束外延来控制十纳米级 InGaAs 量子线的尺寸控制形成”Jpn.J.Appl.Phys.. 38. 1071 (1999)
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