Mapping a magnetization switching field in Ga0.98Mn0.02As microbars with a scanning laser magneto-optical microscope
Mapping a magnetization switching field in Ga0.98Mn0.02As microbars with a scanning laser magneto-optical microscope
复制标题
使用扫描激光磁光显微镜绘制 Ga0.98Mn0.02As 微棒中的磁化转变场
DOI：
10.1063/1.3065964
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发表时间：
2009
影响因子：
3.2
通讯作者：
H. Munekata
中科院分区：
文献类型：
--
作者：
J. Aoyama;Y. Hashimoto;Syuuhei Kobayashi;H. Munekata
利用自制的扫描激光磁光显微镜成功地获得了面内磁化的铁磁Ga 0. 98 Mn 0. 02 As微棒90°磁化翻转的局域信息。切换从包括其方向垂直于初始磁化方向的边缘的边缘区域发生。局部开关场强烈地依赖于初始磁化的方向。实验结果表明，退磁是影响微米尺度（Ga，Mn）As结构磁化反转的重要因素之一。
Local information on 90° magnetization switching in ferromagnetic Ga0.98Mn0.02As microbars with in-plane magnetization was obtained successfully by a homemade scanning laser magneto-optical microscopy. The switching occurs from the edge regions that include edges whose directions are perpendicular to the initial magnetization direction. The local switching field depends strongly on the direction of initial magnetization. The observed results suggest that demagnetization is one of the important factors for magnetization switching in micron-scale (Ga,Mn)As structures.
影响因子：
8.6
作者：
Yamanouchi, M;Chiba, D;Ohno, H
通讯作者：
Ohno, H