Improvement of Adhesion Strength of Electrolessbarrier Layer and Its Application to TSV Process
Improvement of Adhesion Strength of Electrolessbarrier Layer and Its Application to TSV Process
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无电阻挡层附着力的提高及其在TSV工艺中的应用
DOI：
10.1149/05817.0059ecst
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
S. Shingubara
中科院分区：
文献类型：
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作者：
S. Nishizawa;F. Inoue;Tomohiro Shimizu;S. Shingubara
在电镀铜之前利用化学镀阻挡层和晶种技术进行 TSV 填充的全湿法工艺是实现用于硅 3D 集成的低成本且高度可靠的铜填充 TSV 的有前途的方法。尽管已经进行了大量的研究来形成化学镀阻挡层，例如Co合金和Ni合金，但这些阻挡层的粘附性差一直是一个严重的问题。在这项研究中，我们研究了各种添加剂对电镀CoWB薄膜粘附强度的影响。结果表明，添加同时具有磺基和氨基的糖精可显着提高粘合强度。在无电镀阻挡层和晶种技术的情况下，即使对于高纵横比的 TSV，在室温左右的低温下也能形成高度保形的薄膜。然而，我们发现，随着膜厚的增加，化学镀CoWB的粘附强度变差，并且当厚度大于100 nm时会发生分层。 (5-7) 这可能是由于膜应力随着厚度的增加而增加，因此，我们研究了通过在电镀浴中添加有机添加剂来降低膜应力。实验方法和样品制备 TSV 中阻挡膜的制作流程如图 1 所示。首先，我们将样品基板浸入食人鱼溶液（H2SO4：H2O2 = 4：1）中清洗样品。然后用丙酮对样品进行超声波清洗。接下来，我们对 TSV 内壁进行 Pt 纳米颗粒的吸附处理。以甲苯为溶剂，使用APTES（3-氨基丙基三乙氧基硅烷）对SiO2表面进行硅烷偶联处理。将样品浸泡1小时形成APTES的自组装单层(SAM)。 (8)然后，将基板浸入Pd纳米粒子(直径4nm)的溶液中。 TSV 内部均匀地获得了 Pd 纳米颗粒的优异高密度单层吸附。 (9-11)
The all-wet process for TSV-fill utilizing electroless barrier and seed technologies prior to electroplating of Cu is promising methods to realize low-cost and highly reliable Cu-filled TSVs for 3-D integration of Si. Although there have been numerous studies to form electroless barrier layers such as Co- and Ni- alloys, poor adhesion of these barrier layers have been a serious problem. In this study, we studied effect of various additives on the adhesion strength of electroplated CoWB film. It is shown that addition of saccharine, which has both sulfone- and amino- groups, significantly improved adhesion strength. In the case of electroless barrier and seed technologies, a highly conformal film is formed even for a high aspect ratio TSVs at a low temperature around room temperature. However, it was found that the adhesion strength got poorer for the electroless plated CoWB with increasing film thickness, and delamination occurred with thickness larger than 100 nm. (5-7) This may be due to an increase in the film stress with thickness, and therefore, we have studied to reduce the film stress with addition of organic additives in the plating bath. Experimental methods and sample preparation Fabrication procedure of a barrier film in a TSV is shown in Fig.1. At first, we cleaned the samples with Piranha solution (H2SO4: at H2O2 = 4:1) by dipping a sample substrate in it. Then the sample was ultrasonically cleaned with acetone. Next, we performed adsorption treatment of Pt nanoparticles on TSV inner walls. Silane coupling treatment using APTES (3-aminopropyltriethoxysilane) was performed on SiO2 surface with toluene as a solvent. A self-assembled monolayer (SAM) of APTES was formed by immersing a sample for 1 hour. (8) Then, the substrate was immersed in the solution of Pd nanoparticles (4 nm diameter). An excellent high density monolayer adsorption of Pd nanoparticles was obtained inside the TSV uniformly. (9-11)
“激光分子束外延法室温生长 AIN/TiN 外延多层”固体薄膜
DOI：
--
发表时间：
2008
期刊：
Thin Solid Films 516
影响因子：
--
作者：
Miao Zhang;・広川 二郎・安藤 真;Wakana Hara;Wakana Hara
通讯作者：
Wakana Hara