Direct imaging of 3D atomic-scale dopant-defect clustering processes in ion-implanted silicon.
Direct imaging of 3D atomic-scale dopant-defect clustering processes in ion-implanted silicon.
复制标题
离子注入硅中 3D 原子级掺杂剂缺陷聚类过程的直接成像。
DOI：
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
W. Vandervorst
中科院分区：
文献类型：
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作者：
S. Koelling;O. Richard;H. Bender;M. Uematsu;A. Schulze;G. Zschaetzsch;M. Gilbert;W. Vandervorst
用于未来电子、能源和健康的纳米级半导体器件的制造尤其基于掺杂剂原子到半导体晶格中的精确放置以及它们的同时或随后的电激活。掺杂剂通过诸如离子注入、基于等离子体的掺杂和热退火的制造工艺构建到晶格中。在整个制造过程中，基本现象如掺杂剂扩散、活化和聚集与晶格的破坏和随后的恢复同时发生。这些过程由离子-宿主原子相互作用的原子尺度机制描述，并且对所得器件的电性能具有巨大影响。深入了解它们的基本性质对于优化纳米技术的性能至关重要。在本文中，我们演示了直接三维成像的硼原子团簇和晶体缺陷，使用场离子显微镜。我们的方法允许第一次完整的表征硼装饰的晶体缺陷的大小和晶体取向。这种新方法开辟了一条道路，以图像的各种各样的掺杂剂团簇的形式，从而研究在原子尺度上的硅中硼团簇的形成和溶解。
The fabrication of nanoscale semiconductor devices for use in future electronics, energy, and health is among others based on the precise placement of dopant atoms into the crystal lattice of semiconductors and their concurrent or subsequent electrical activation. Dopants are built into the lattice by fabrication processes like ion implantation, plasma-based doping, and thermal annealing. Throughout the fabrication processes fundamental phenomena like dopant diffusion, activation, and clustering occur concurrently with damaging and subsequently recovering the crystal lattice. These processes are described by atomic-scale mechanisms of ion-host atom interaction and have an immense impact on the electrical performance of the resulting devices. Insight in their fundamental nature is of utmost importance for optimizing the performance of nanoscale technologies. In this paper, we demonstrate direct three-dimensional imaging of boron clusters and atoms in crystal defects using field ion microscopy. Our approach allows for the first time the complete characterization of the size and crystallographic orientation of boron-decorated crystal defects. This new method opens a path to image a wide variety of dopant-cluster forms and hence to study the formation and dissolution of boron clusters in silicon on the atomic scale.
由于源极和漏极扩展中的随机掺杂波动导致完全耗尽型 SOI MOSFET 的统计变化
影响因子：
4.9
作者：
Markov S
通讯作者：
Markov S