Silicon spintronics at room temperature
Silicon spintronics at room temperature
复制标题
室温硅自旋电子学
DOI：
10.1117/12.860150
复制
发表时间：
2010
期刊：
影响因子：
--
通讯作者：
R. Jansen
中科院分区：
文献类型：
--
作者：
S. Dash;S. Sharma;J. Le Breton;R. Jansen
室温下自旋极化载流子在半导体中的电注入和探测一直是自旋电子学的关键挑战之一。为了实现基于自旋的下一代信息处理设备，利用硅（占主导地位的电子材料）中的自旋功能尤为关键。在这里，我们提出了我们最近的演示电自旋注入到n型和p型硅从铁磁隧道接触，通过汉勒效应的自旋操纵，和电检测的诱导自旋积累，所有在室温下。一个控制实验，利用非磁性纳米层插入铁磁体和隧道势垒之间支持的数据，证明自旋注入和排除任何虚假信号。我们还报告汉勒效应测量在两个终端的几何形状，并表明，在这种配置中的汉勒信号总是占主导地位的自旋积累下面的两个单独的接触，而不是自旋运输从注射器到检测器通过半导体通道。这些结果提供了许多新的见解，并为进一步探索在环境温度下工作的互补硅器件中的自旋功能开辟了一个平台。
The electrical injection and detection of spin-polarized carriers in semiconductors at room temperature has been one of the key challenges in spintronics. Exploiting spin functionality in silicon, the dominant electronic material, is particularly crucial in order to realize the next generation of information processing devices based on spin. Here we present our recent demonstration of electrical spin injection into n-type and p-type silicon from a ferromagnetic tunnel contact, the spin manipulation via the Hanle effect, and the electrical detection of the induced spin accumulation, all at room temperature. A control experiment that makes use of a non-magnetic nanolayer inserted between the ferromagnet and the tunnel barrier supports the data, proving spin injection and excluding any spurious signals. We also report Hanle effect measurements in two-terminal geometry and show that in this configuration the Hanle signal is always dominated by spin accumulation below the two individual contacts, rather than spin transport from injector to detector through the semiconductor channel. The results provide many new insights and open a platform for further exploration of spin functionality in complementary silicon devices operating at ambient temperature.
影响因子：
4
作者：
Ando, Y.;Hamaya, K.;Miyao, M.
通讯作者：
Miyao, M.