Magnetic proximity effect of YIG/PtSe2
Magnetic proximity effect of YIG/PtSe2
复制标题
YIG/PtSe2 的磁邻近效应
DOI：
10.1016/j.jmmm.2022.169893
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发表时间：
2022-09
影响因子：
2.7
通讯作者：
Chang Ching-Ray
中科院分区：
文献类型：
--
作者：
Wang Meng-Chien;Xu Hongjun;Hsu Jen-Hwa;Wu Han-Chun;Chang Ching-Ray
磁邻近效应对重金属和磁绝缘体双层系统的输运性能有显着影响。在这里，我们首先回顾了非磁性重金属/磁性绝缘体双层结构的磁输运特性，并强调了磁邻近效应所起的作用。由于绝缘层内不存在电流分流和焦耳热效应，因此相对容易理解这些双层的磁邻近响应的物理起源和影响。在本文的第二部分，我们研究了 YIG/PtSe2 的磁输运特性。 YIG 具有大带隙和低磁化阻尼系数，是一种常用的磁绝缘体，而 PtSe2 属于二维 (2D) 过渡金属二硫属化物家族，自旋轨道耦合很强。我们发现 PtSe2 中的自发磁化是由 YIG 的接近引起的，从而导致负磁阻。此外，YIG/PtSe2系统中同时存在AMR和自旋霍尔MR。由于 PtSe2 的自发磁化，反常霍尔电阻值可以达到 1Ω，远大于平面霍尔效应。
The magnetic proximity effect has pronounced influence on the transport properties of bilayer system with a heavy metal and a magnetic insulator. Here we first review the magneto-transport properties of non-magnetic heavy metal/magnetic insulator bilayer structure and emphasize the role played by magnetic proximity effect. Since there are no current shunting and Joule heating effects within the insulating layer, it is relatively easier to understand the physical origin and impact of the magnetic proximity response for these bilayers. In the second part of this article, we study magneto-transport properties of YIG/PtSe2. YIG is known to have large band gap and low magnetization damping coefficient and is a frequently used magnetic insulator, while PtSe2belongs to the family of two dimensional (2D) transition metal dichalcogenides in which spin–orbit coupling is strong. We found that the spontaneous magnetization in PtSe2has been induced by the proximity of YIG, which results in a negative MR. Moreover, the AMR and spin Hall MR are both existed in YIG/PtSe2system. The value of Anomalous Hall resistance can reach 1 Ω, which is much greater than that of the planar Hall effect due to the spontaneous magnetization in PtSe2.
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影响因子：
16.6
作者：
Wu HC;Chaika AN;Hsu MC;Huang TW;Abid M;Abid M;Aristov VY;Molodtsova OV;Babenkov SV;Niu Y;Murphy BE;Krasnikov SA;Lübben O;Liu H;Chun BS;Janabi YT;Molotkov SN;Shvets IV;Lichtenstein AI;Katsnelson MI;Chang CR
通讯作者：
Chang CR
影响因子：
3.7
作者：
Xiang Zhou;Li Ma;Zhong Shi;W. Fan;Jian‐Guo Zheng;R. Evans;Shiming Zhou
通讯作者：
Xiang Zhou;Li Ma;Zhong Shi;W. Fan;Jian‐Guo Zheng;R. Evans;Shiming Zhou
具有厚度可调电学和磁电性能的超薄 PtSe2 纳米片的受控合成
DOI：
10.1002/advs.202103507
发表时间：
2022-01
期刊：
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
影响因子：
--
作者：
Ma H;Qian Q;Qin B;Wan Z;Wu R;Zhao B;Zhang H;Zhang Z;Li J;Zhang Z;Li B;Wang L;Duan X
通讯作者：
Duan X
影响因子：
8.6
作者：
Hirsch, JE
通讯作者：
Hirsch, JE
影响因子：
8.6
作者：
Liu, Luqiao;Moriyama, Takahiro;Buhrman, R. A.
通讯作者：
Buhrman, R. A.