Etching organic low dielectric film in ultrahigh frequency plasma using N2/H2 and N2/NH3 gases
Etching organic low dielectric film in ultrahigh frequency plasma using N2/H2 and N2/NH3 gases
复制标题
使用 N2/H2 和 N2/NH3 气体在超高频等离子体中蚀刻有机低介电薄膜
DOI：
10.1063/1.1588351
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发表时间：
2003
影响因子：
3.2
通讯作者：
T. Goto
中科院分区：
文献类型：
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作者：
H. Nagai;M. Hiramatsu;M. Hori;T. Goto
采用N2/H2和N2/NH3两种气体，研究了500 MHz UHF等离子体中低介电常数（low-k）有机薄膜气相中物种的行为及其对刻蚀特性的影响。采用真空紫外吸收光谱和红外二极管激光吸收光谱技术分别测量了刻蚀等离子体中H、N自由基的绝对浓度和NH3分子的绝对浓度。通过比较UHF等离子体中自由基的行为与先前研究中报道的在13.56 MHz频率下激发的电感耦合等离子体（ICP）中自由基的行为，阐明了激发等离子体产生H和N自由基的频率的影响。在UHF等离子体中比在ICP中更有效地从NH3气体产生H自由基，并且更有效地从N2气体产生N自由基。H自由基不仅通过H2分子的解离产生，而且还从N2/H2等离子体中产生的NH3分子产生。于...
The behavior of species in the gas phase and their effects on the etching characteristics of organic film with the lower dielectric constant (low-k) were investigated in 500 MHz ultrahigh frequency (UHF) plasma using N2/H2 and N2/NH3 gases. The absolute H and N radical densities and NH3 molecule density in etching plasmas were evaluated by the vacuum ultraviolet absorption spectroscopy and the infrared diode laser absorption spectroscopy technique, respectively. The effects of frequency that excited the plasma in the production of H and N radicals were clarified by comparing the behavior of radicals in the UHF plasma with that in the inductively coupled plasma (ICP) exciting at the frequency of 13.56 MHz reported in the previous study. H radicals were produced more efficiently from NH3 gas and N radicals more efficiently from N2 gas in the UHF plasma than in the ICP. H radicals were generated not only through the dissociation of the H2 molecule but also from NH3 molecules produced in the N2/H2 plasma. On ...
开发真空紫外吸收光谱技术，采用氮分子微放电空心阴极灯测量等离子体中氮原子的绝对密度
DOI：
--
发表时间：
2001
期刊：
影响因子：
--
作者：
S. Takashima;S. Arai;M. Hori;T. Goto;A. Kono;Masafumi Ito;K. Yoneda
通讯作者：
K. Yoneda