Visualization of charges stored in the floating gate of flash memory by scanning nonlinear dielectric microscopy
Visualization of charges stored in the floating gate of flash memory by scanning nonlinear dielectric microscopy
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通过扫描非线性介电显微镜观察存储在闪存浮栅中的电荷
DOI：
10.1088/0957-4484/17/7/s14
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发表时间：
2006
期刊：
影响因子：
3.5
通讯作者：
Yasuo Cho
中科院分区：
文献类型：
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作者：
K. Honda;S. Hashimoto;Yasuo Cho
应用扫描非线性介电显微镜（SNDM），我们成功地澄清了电子存在于闪存浮栅的多晶硅层。通过扫描覆盖浮置栅极的SiO2-SiN 4-SiO2（ONO）膜的表面，可以通过SNDM将浮置栅极中累积的电荷检测为多晶硅（浮置栅极）的电容的变化。在浮栅区域的SNDM图像中有一个清晰的黑色对比区域，电子被注入该区域。然而，在没有注入电子的浮栅中没有出现明显的对比。我们证实，SNDM是观察闪存中积累的电荷的最有用的方法之一。
By applying scanning nonlinear dielectric microscopy (SNDM), we succeeded in clarifying that electrons existed in the poly-Si layer of the floating gate of a flash memory. The charge accumulated in the floating gate can be detected by SNDM as a change in the capacitance of the poly-Si (floating gate) by scanning the surface of the SiO2–SiN4–SiO2 (ONO) film covering the floating gate. There was a clear black contrast region in the SNDM image of the floating gate area, where electrons were injected. However, no clear contrast appeared in the floating gate where electrons were not injected. We confirmed that SNDM is one of the most useful methods of observing the charge accumulated in flash memory.
在微擦除循环后使用扫描非线性介电显微镜观察金属 SiO_2-Si_3N_4-SiO_2 半导体型闪存薄栅膜中电子和空穴的可视化
DOI：
--
发表时间：
2005
期刊：
Appl. Phys. Lett. 86・6
影响因子：
--
作者：
K.Omae;Y.Kawakami;S.Fujita;Y.Narukawa;T.Mukai;宮崎誠一;Koichiro Honda
通讯作者：
Koichiro Honda