Enhanced thermoelectric performance of n-type Nb-doped PbTe by compensating resonant level and inducing atomic disorder
Enhanced thermoelectric performance of n-type Nb-doped PbTe by compensating resonant level and inducing atomic disorder
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通过补偿谐振能级和诱导原子无序增强n型Nb掺杂PbTe的热电性能
DOI:
10.1016/j.mtphys.2022.100677
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发表时间:
2022-04
影响因子:
11.5
通讯作者:
Ang Ran
中科院分区:
文献类型:
--
作者:
Liu Hangtian;Sun Qiang;Zhong Yan;Xia Chengliang;Chen Yue;Shi Xiaolei;Chen Zhigang;Ang Ran
The inferior thermoelectric performance of n-type PbTe limits the overall conversion efficiency in PbTe-based thermoelectric devices. Here, we introduce Sb and Cu2Te into n-type Nb-doped PbTe for achieving ultra-high thermoelectric performance. The co-doping of Sb and Cu effectively optimizes carrier concentration to compensate for the resonant level in Nb-doped PbTe alloys, and consequently achieves superior electrical performance over a wide temperature range. Meanwhile, by combining extended X-ray absorption fine structure and exhaustive electron microscopy investigations, we found Nb and Sb substitutions at Pb sites induce atomic disorders, such local mass fluctuation and local strain variation, in the lattice, and Cu2Te further results in microsized segregations and nanoprecipitates, which significantly suppress lattice thermal conductivity. Eventually, a peakZTof ∼1.32 at 823 K and a high averageZTave∼1.01 in the range from 323 to 823 K are achieved in the Pb0·975Nb0·02Sb0·005Te-0.004Cu2Te. Based on our findings, we innovatively employ comprehensive characterization to reveal the origin of ultrahigh thermoelectric performance in n-type Nb-doped PbTe within a wide temperature range, which should be generalized to other thermoelectric materials.
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影响因子:
15
作者:
Xiao Yu;Wu Haijun;Li Wei;Yin Meijie;Pei Yanling;Zhang Yang;Fu Liangwei;Chen Yuexing;Pennycook Stephen J.;Huang Li;He Jiaqing;Zhao Li-Dong
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Zhao Li-Dong
影响因子:
17.6
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影响因子:
27.8
作者:
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通讯作者:
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影响因子:
17.1
作者:
Yang, Ya;Pradel, Ken C.;Wang, Zhong Lin
通讯作者:
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影响因子:
64.8
作者:
Biswas, Kanishka;He, Jiaqing;Kanatzidis, Mercouri G.
通讯作者:
Kanatzidis, Mercouri G.