A hard x-ray photoemission study of transparent conducting fluorine-doped tin dioxide
A hard x-ray photoemission study of transparent conducting fluorine-doped tin dioxide
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透明导电掺氟二氧化锡的硬X射线光电子发射研究
DOI：
10.1109/pvsc.2018.8547950
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Jack Swallow E
中科院分区：
文献类型：
--
作者：
Jack Swallow E
掺氟氧化锡(FTO)是一种商业上成功的透明导电氧化物，具有很好的电学性能(电阻率1103 cm)和光学性能(透过率85%)。这些特性，再加上浮法玻璃生产线上廉价而大规模的沉积，意味着FTO已在低发射率窗户和太阳能电池等领域找到了商业用途。然而，尽管它得到了广泛的应用，但对FTO的掺杂和缺陷缺乏详细的了解。最近的工作[1]表明，氟间隙在限制FTO的导电性方面起着主要作用。在这里，我们提出了同步辐射高能X射线光电子能谱(XPS)的氟1S核心能级的FTO薄膜，而不是原位表面处理。这比标准的XPS探测得更深，表明氟间隙不仅存在于薄膜的表面，而且不是用于表面制备的Ar离子溅射的产物。
Fluorine-doped tin oxide (FTO) is a commercially successful transparent conducting oxide with very good electrical (resistivities <; 1103cm) and optical properties (transmittance >85%). These properties coupled with cheap and large-scale deposition on float-glass lines means FTO has found commercial use in, for example, low emissivity windows and solar cells. However, despite its widespread application, a detailed understanding is lacking of the doping and defects in FTO. Recent work [1] has suggested that the fluorine interstitial plays a major role in limiting the conductivity of FTO. Here we present synchrotron radiation high energy x-ray photoemission spectroscopy (XPS) of the fluorine 1s core level of FTO films without in situ surface preparation. This probes deeper than standard XPS and shows that the fluorine interstitial is present not just at the surface of the films and is not an artefact of argon ion sputtering for surface preparation.
影响因子：
3.7
作者：
Borgatti, Francesco;Berger, J. A.;Egdell, Russell G.
通讯作者：
Egdell, Russell G.