Distributed feedback InGaN/GaN laser diodes
Distributed feedback InGaN/GaN laser diodes
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分布式反馈 InGaN/GaN 激光二极管
DOI：
10.1117/12.2285632
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Watson S
中科院分区：
文献类型：
--
作者：
Watson S
我们已经实现了InGaN/GaN分布反馈激光二极管在42 X nm波长范围内的单一波长发射。基于氮化镓（GaN）的激光二极管在包括原子光谱、数据存储和光通信在内的广泛应用中是有用的器件。为了充分利用这些应用领域中的一些，需要具有高光谱纯度的GaN激光二极管，例如在原子钟中，其中窄线宽蓝色激光源可以用于靶向原子冷却过渡。以前，GaN DFB激光器已经使用掩埋或表面光栅实现。埋入式光栅需要复杂的过度生长步骤，这可能会引入外延缺陷。表面光栅设计可能由于干法蚀刻损坏而损害p型接触的质量，并且易于增加光栅区域中的光学损耗。在我们的方法中，光栅被蚀刻到脊的侧壁中。优点包括一个简单的制造路线和设计自由度的光栅耦合strength.Our这些设备的预期应用是冷却的Sr+离子和这个目标的SMSR，线宽和功率的激光特性是至关重要的。我们研究了这些特性是如何通过调整激光器的设计参数，如光栅耦合系数和腔长的影响。
We have realised InGaN/GaN distributed feedback laser diodes emitting at a single wavelength in the 42X nm wavelength range. Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow line width blue laser source can be used to target the atomic cooling transition. Previously, GaN DFB lasers have been realised using buried or surface gratings. Buried gratings require complex overgrowth steps which can introduce epi-defects. Surface gratings designs, can compromise the quality of the p-type contact due to dry etch damage and are prone to increased optical losses in the grating regions. In our approach the grating is etched into the sidewall of the ridge. Advantages include a simpler fabrication route and design freedom over the grating coupling strength.Our intended application for these devices is cooling of the Sr+ ion and for this objective the laser characteristics of SMSR, linewidth, and power are critical. We investigate how these characteristics are affected by adjusting laser design parameters such as grating coupling coefficient and cavity length.
影响因子：
2.6
作者：
T. Slight;A. Yadav;O. Odedina;W. Meredith;K. Docherty;E. Rafailov;A. Kelly
通讯作者：
T. Slight;A. Yadav;O. Odedina;W. Meredith;K. Docherty;E. Rafailov;A. Kelly
DFB 激光器中光谱线宽对腔长和耦合系数的依赖性
影响因子：
1.1
作者：
S. Ogita;Y. Kotaki;K. Kihara;M. Matsuda;H. Ishikawa;H. Imai
通讯作者：
H. Imai