Chemical vapor deposition of monolayer WS2 nanosheets on Au foils toward direct application in hydrogen evolution
Chemical vapor deposition of monolayer WS2 nanosheets on Au foils toward direct application in hydrogen evolution
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金箔上单层 WS2 纳米片的化学气相沉积，可直接应用于析氢
DOI：
10.1007/s12274-015-0793-z
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发表时间：
2015-07
期刊：
影响因子：
9.9
通讯作者：
Liu, Zhongfan
中科院分区：
文献类型：
--
作者：
Li, Cong;Lang, Xingyou;Zhang, Yanfeng;Liu, Zhongfan
单层二硫化钨(WS2)是半导体过渡金属二卤化物家族中的典型成员，由于其独特的性质引起了人们的极大兴趣。有趣的是，WS2的边缘显示出理想的氢结合能，这使得WS2成为铂基析氢反应(HER)电催化剂的潜在替代品。在这里，我们首次展示了用一种简便的低压化学气相沉积方法在厘米级的金箔上成功地合成了均匀的单层WS2纳米片。普遍观察到的三角形WS2纳米片的边缘长度在∼100到∼1,000 nm之间可调。在金箔上制备的W_2纳米薄片具有丰富的边缘，是有效的HER催化剂，表现出较高的交换电流密度∼30.20μA/cm~2和较小的起始电位∼110 mV。考察了覆盖率和电畴尺寸(与WS2的活性边密度密切相关)对电催化活性的影响。这项工作不仅为通过引入金属箔衬底实现单层WS2的批量生产提供了一条新的途径，而且也为其直接应用于简易化HER开辟了道路。
Monolayer tungsten disulfide (WS2), a typical member of the semiconducting transition metal dichalcogenide family, has drawn considerable interest because of its unique properties. Intriguingly, the edge of WS2 exhibits an ideal hydrogen binding energy, which makes WS2 a potential alternative to Pt-based electrocatalysts for the hydrogen evolution reaction (HER). Here, we demonstrate for the first time the successful synthesis of uniform monolayer WS2 nanosheets on centimeter-scale Au foils using a facile, low-pressure chemical vapor deposition method. The edge lengths of the universally observed triangular WS2 nanosheets are tunable from ∼100 to ∼1,000 nm. The WS2 nanosheets on Au foils featuring abundant edges were then discovered to be efficient catalysts for the HER, exhibiting a rather high exchange current density of ∼30.20 μA/cm2 and a small onset potential of ∼110 mV. The effects of coverage and domain size (which correlate closely with the active edge density of WS2) on the electrocatalytic activity were investigated. This work not only provides a novel route toward the batch-production of monolayer WS2 via the introduction of metal foil substrates but also opens up its direct application for facile HER.
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影响因子：
15
作者：
Li, Yanguang;Wang, Hailiang;Dai, Hongjie
通讯作者：
Dai, Hongjie
影响因子：
15
作者：
Hinnemann, B;Moses, PG;Norskov, JK
通讯作者：
Norskov, JK
影响因子：
3.7
作者：
Bollinger, MV;Jacobsen, KW;Norskov, JK
通讯作者：
Norskov, JK
金箔上单层MoS2的可控生长和转移及其在析氢反应中的潜在应用
影响因子：
17.1
作者：
Shi, Jianping;Ma, Donglin;Liu, Zhongfan
通讯作者：
Liu, Zhongfan
DOI：
--
发表时间：
2011-11
期刊：
arXiv: Materials Science
影响因子：
--
作者：
Y. Zhan;Zheng Liu;S. Najmaei;P. Ajayan;J. Lou
通讯作者：
Y. Zhan;Zheng Liu;S. Najmaei;P. Ajayan;J. Lou