Two-Dimensional Manganese Nitride Monolayer with Room Temperature Rigid Ferromagnetism under Strain

Two-Dimensional Manganese Nitride Monolayer with Room Temperature Rigid Ferromagnetism under Strain
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应变下具有室温刚性铁磁性的二维氮化锰单层

DOI:
10.1021/acs.jpcc.8b02323
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发表时间:
2018-06
影响因子:
3.7
通讯作者:
Zhu Hong
Zhu Hong
中科院分区:
化学3区
文献类型:
--
作者:
Xu Zhenming;Zhu Hong

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开发具有室温磁有序和大自旋极化的低维自旋电子学材料是制造具有高电路集成密度和速度的实用自旋电子器件的关键。在这里,用第一性原理计算系统地研究了具有室温磁有序和100%自旋极化的二维六方MNN单分子膜。该MNN单分子膜在热、动态和机械上是稳定的,本质上是半金属的,具有非常宽的带隙。单层膜的居里温度为∼368K,高于室温,对应变不敏感。在−为10%~10%的外加应变下,MNN单层表现出半金属结构和优异的磁稳定性。我们的计算表明,MNN单分子膜可能是一种很有前途的室温自旋电子器件材料。
Developing low-dimensional spintronic materials with room temperature magnetic ordering and large spin polarization is the key for the fabrication of practical spintronic devices with a high circuit integration density and speed. Here, first-principles calculations were performed to systematically investigate a two-dimensional hexagonal MnN monolayer with room temperature magnetic ordering and 100% spin polarization. The MnN monolayer is thermally, dynamically, and mechanically stable, and intrinsically half-metallic with a very wide band gap. The Curie temperature of the MnN monolayer is estimated to be ∼368 K, which is higher than room temperature and insensitive to strain. The MnN monolayer shows half-metallic and excellent magnetic stability upon the external strain from −10 to 10%. Our calculations indicate that the MnN monolayer could be a promising material for room temperature spintronic devices.
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发表时间: 1993-12
影响因子: 8.6
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