COMPARATIVE EVALUATION OF Si MOSFET-BASED SOFT-SWITCHED DC-DC CONVERTERS AND GaN HEMT-BASED HARD-SWITCHED DC-DC CONVERTERS
COMPARATIVE EVALUATION OF Si MOSFET-BASED SOFT-SWITCHED DC-DC CONVERTERS AND GaN HEMT-BASED HARD-SWITCHED DC-DC CONVERTERS
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基于 Si MOSFET 的软开关 DC-DC 转换器与基于 GaN HEMT 的硬开关 DC-DC 转换器的比较评估
DOI：
10.1049/icp.2021.1195
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Ansari S
中科院分区：
文献类型：
--
作者：
Ansari S
使用软开关技术可以降低升压转换器等 DC-DC 转换器的开关损耗。然而，开关所需的辅助电路增加了转换器的复杂性和成本。与硅 (Si) 器件相比，基于宽带隙 (WBG) 材料（例如氮化镓 (GaN)）的开关器件具有较低的开关损耗，因此它们可以成为降低开关损耗的替代方案，同时保持传统转换器的简单结构。 WBG 器件的高成本及其高水平的电磁干扰 (EMI) 引起人们的关注。本文旨在从效率、功率密度、可靠性、EMI 和成本方面评估这两种方法在 DC-DC 转换器中的性能。因此，分别对使用 Si 和 GaN 功率开关的两种软开关升压转换器和硬开关升压转换器进行了仿真并进行了理论上的比较。结果表明，硅基软开关拓扑产生的 EMI 较小，而基于 GaN 的硬开关拓扑提供更好的功率密度、效率、成本和可靠性。最后，给出了两个转换器的仿真结果，以确认它们正常运行。
Switching losses of DC-DC converters such as the boost converter can be reduced using soft switching techniques. However, the auxiliary circuits required for the switches increase the complexity and cost of the converters. Switching devices based on wide bandgap (WBG) materials such as gallium nitride (GaN) have low switching losses compared to silicon (Si) devices hence they can be an alternative to decrease the switching losses while keeping the simple structure of the conventional converters. The high cost of WBG devices together with their high level of electromagnetic interference (EMI) cause concern. This paper aims to evaluate the performance of these two methods in DC-DC converters in terms of efficiency, power density, reliability, EMI and cost. Therefore, two soft and hard switching boost converters using Si and GaN power switches, respectively, are simulated and compared theoretically. It is shown that the Si-based soft switching topology causes less EMI, while GaN-based hard switching topology provides better power density, efficiency, cost, and reliability. Finally, the simulation results of both converters are presented to confirm that they operate properly.
一种新型零电流开关反激式逆变器的分析与实现
影响因子：
2.3
作者：
Sajad A. Ansari;J. Moghani;M. Mohammadi
通讯作者：
M. Mohammadi
Si-IGBT驱动器与GaN驱动器的效率比较
影响因子：
4.4
作者：
K. Shirabe;M. Swamy;Jun;M. Hisatsune;YiFeng Wu;D. Kebort;J. Honea
通讯作者：
J. Honea