Low-temperature solution-combustion-processed Zn-Doped Nb2O5 as an electron transport layer for efficient and stable perovskite solar cells
Low-temperature solution-combustion-processed Zn-Doped Nb2O5 as an electron transport layer for efficient and stable perovskite solar cells
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低温溶液燃烧处理的掺锌 Nb2O5 作为高效稳定钙钛矿太阳能电池的电子传输层
DOI:
10.1016/j.jpowsour.2019.227419
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发表时间:
2020-02
影响因子:
9.2
通讯作者:
Lu Xing
中科院分区:
文献类型:
--
作者:
Ye Xiaoqin;Ling Hanbing;Zhang Rui;Wen Zhiyue;Hu Shuaifeng;Akasaka Takeshi;Xia Jiangbin;Lu Xing
Niobium oxide (Nb2O5) has been demonstrated as an ideal electron transport layer (ETL) material for perovskite solar cells (PSCs) due to its excellent optical transmittance and high carrier mobility. Herein, a low-temperature (200 °C) solution-combustion method is adopted to prepare the Nb2O5film used as an ETL in PSCs. Under optimized conditions, PSC with the Nb2O5ETL obtains a power conversion efficiency (PCE) of 16.40%. Moreover, we find that Zn-doping of Nb2O5can further improve the efficiency of the device. As a matter of fact, the results show that a champion PCE of 17.70% can be achieved for the PSC with a 5 mol% Zn-doped Nb2O5ETL. Significantly, both Nb2O5- and Zn-doped Nb2O5-based devices exhibit obviously better stability than the traditional high-temperature-sintered (~500 °C) mesoporous TiO2-based devices, maintaining 80% of their initial PCE after storage in air for 20 days. In contrast, the PCE of the device with a TiO2ETL quickly drops to 30% of its initial value after 13 days under the same storage condition. Consequently, this work suggests that using Zn-doped Nb2O5ETL prepared by the low-temperature solution-combustion method is promising towards efficient and stable perovskite solar cells.
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影响因子:
1.6
作者:
Atsushi Kogo;Y. Numata;M. Ikegami;T. Miyasaka
通讯作者:
Atsushi Kogo;Y. Numata;M. Ikegami;T. Miyasaka
影响因子:
9.5
作者:
A. Shalan;Tomoya Oshikiri;Sudhakar Narra;Mahmoud M. Elshanawany;K. Ueno;Hui-ping Wu;Keisuke Nakamura-Keisuke-Nakamur
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A. Shalan;Tomoya Oshikiri;Sudhakar Narra;Mahmoud M. Elshanawany;K. Ueno;Hui-ping Wu;Keisuke Nakamura-Keisuke-Nakamur
影响因子:
16.6
作者:
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通讯作者:
Snaith, Henry J.
影响因子:
6.9
作者:
Bai, Fan;Hu, Yonghong;Zhang, Shufang
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Zhang, Shufang
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17.6
作者:
Heo, Jin Hyuck;You, Myoung Sang;Im, Sang Hyuk
通讯作者:
Im, Sang Hyuk