Characterization of fully depleted CMOS active pixel sensors on high resistivity substrates for use in a high radiation environment
Characterization of fully depleted CMOS active pixel sensors on high resistivity substrates for use in a high radiation environment
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用于高辐射环境的高电阻率基板上的完全耗尽 CMOS 有源像素传感器的表征
DOI：
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
N. Wermes
中科院分区：
文献类型：
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作者：
T. Hirono;M. Barbero;P. Breugnon;S. Godiot;T. Hemperek;F. Hügging;J. Janssen;H. Krüger;Jian Liu;P. Pangaud;I. Perić;D. Pohl;A. Rozanov;P. Rymaszewski;N. Wermes
耗尽型CMOS有源传感器（DMAPS）正在开发用于高辐射环境中的高能粒子物理实验，例如ATLAS高亮度大型强子对撞机（HL-LHC）。由于通过漂移收集电荷对于恶劣的辐射环境是强制性的，因此需要向高电阻传感器材料施加高偏置电压。本文采用150 nm CMOS工艺在电阻率大于2k Ω·cm的衬底上制作了一个DMAPS原型，衬底厚度减薄到100 μm。完全耗尽发生在20 V左右，这远低于110 V的击穿电压。所提出的原型还采用了亚像素编解码的概念，由读出芯片的一个像素读出原型芯片的三个像素。由于辐射耐受性是DMAPS中最大的关注点之一，CCPD_LF芯片已经用X射线和中子分别照射到50 Mrad的总电离剂量和1015 neq/cm 2的通量。
Depleted CMOS active sensors (DMAPS) are being developed for high-energy particle physics experiments in high radiation environments, such as in the ATLAS High Luminosity Large Hadron Collider (HL-LHC). Since charge collection by drift is mandatory for harsh radiation environment, the application of high bias voltage to high resistive sensor material is needed. In this work, a prototype of a DMAPS was fabricated in a 150nm CMOS process on a substrate with a resistivity of >2 kΩ·cm that was thinned to 100 μm. Full depletion occurs around 20V, which is far below the breakdown voltage of 110 V. A readout chip has been attached for fast triggered readout. Presented prototype also uses a concept of sub-pixel en/decoding three pixels of the prototype chip are readout by one pixel of the readout chip. Since radiation tolerance is one of the largest concerns in DMAPS, the CCPD_LF chip has been irradiated with X-rays and neutrons up to a total ionization dose of 50 Mrad and a fluence of 1015neq/cm2, respectively.
HVCMOS 像素传感器概述
影响因子：
1.3
作者：
I. Peric´
通讯作者：
I. Peric´
DOI：
10.1016/j.nima.2012.01.029
发表时间：
2012-05
影响因子：
1.4
作者：
M. Guthoff;O. Brovchenko;W. Boer;A. Dierlamm;T. Muller;A. Ritter;M. Schmanau;H. Simonis
通讯作者：
M. Guthoff;O. Brovchenko;W. Boer;A. Dierlamm;T. Muller;A. Ritter;M. Schmanau;H. Simonis