Effect of dielectronic recombination on charge-state distribution in laser-produced plasma based on steady-state collisional-radiative models
Effect of dielectronic recombination on charge-state distribution in laser-produced plasma based on steady-state collisional-radiative models
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基于稳态碰撞辐射模型双电子复合对激光产生等离子体中电荷态分布的影响
DOI：
10.1088/2058-6272/ab9889
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发表时间：
2020-08
影响因子：
1.7
通讯作者：
Fu Yanbiao
中科院分区：
文献类型：
--
作者：
Lu Haidong;Su Maogen;Min Qi;Cao Shiquan;He Siqi;Dong Chenzhong;Fu Yanbiao
利用四种不同的稳态碰撞辐射模型，研究了双电子复合对激光硅等离子体中电荷态分布的影响。为了评估这种效果，我们进行了一系列的时间分辨光谱的高电荷的硅离子在极紫外区域。用从头算方法计算了Si~（6+）-Si~（4+）离子的DR速率系数。我们还分析了碰撞电离、辐射复合、三体复合、光电离和DR速率系数随电子温度的变化。通过比较归一化的实验谱和模拟谱，得到了不同延迟时间下的电子温度和电子密度。还得到了四种不同CR模型的离子分数和平均电荷态。结果表明，DR过程在等离子体演化阶段有较大的影响，在等离子体诊断中不可忽略。
Armed with four different steady-state collisional-radiative (CR) models, we investigated the effect of dielectronic recombination (DR) on the charge-state distribution in laser-produced silicon plasma. To assess this effect, we performed a series of temporally resolved spectra of highly charged Si ions in the extreme ultraviolet region. Ab initio calculations of the DR rate coefficients were done for Si~(6+) -Si~(4+) ions. We also analyzed the evolution of the collisional ionization, radiative recombination, three-body recombination, photo-ionization, and DR rate coefficients as a function of electron temperature. The electron temperature and electron density for different delay times were obtained by comparing the normalized experimental and simulated spectra. The ion fraction and average charge state from the four different CR models were also obtained. The results indicate that the DR process has a greater influence in the stage of plasma evolution that cannot be neglected in plasma diagnoses.
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DOI：
10.1088/1361-6455/aa6a3c
发表时间：
2017-03
期刊：
Journal of Physics B: Atomic, Molecular and Optical Physics
影响因子：
--
作者：
S. Preval;N. Badnell;M. O’Mullane
通讯作者：
S. Preval;N. Badnell;M. O’Mullane
影响因子：
4.6
作者：
A. Kolb;R. Mcwhirter
通讯作者：
A. Kolb;R. Mcwhirter
DOI：
10.1088/0022-3727/2/12/311
发表时间：
1969
期刊：
Journal of Physics D: Applied Physics
影响因子：
--
作者：
N J Peacock;R S Pease
通讯作者：
N J Peacock;R S Pease
影响因子：
2.4
作者：
G. Gupta;B. Sinha
通讯作者：
G. Gupta;B. Sinha
影响因子：
2.9
作者：
Fu, Y. B.;Dong, C. Z.;Wang, J. G.
通讯作者：
Wang, J. G.